Manganite-based memristive heterojunction with tunable non-linear I-V characteristics

Hong Sub Lee, Hyung Ho Park, M. J. Rozenberg

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr1-xCaxMnO3 (PCMO) and CaMnO3-δ (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current-voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al-PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO-CMO-PCMO.

Original languageEnglish
Pages (from-to)6444-6450
Number of pages7
Issue number15
Publication statusPublished - 2015 Apr 21

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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