Magnetotransport in an n-type diluted magnetic semiconductor: (Ga,Mn)N

K. I. Lee, M. H. Ham, J. M. Lee, J. Y. Chang, J. M. Myoung, S. H. Han, W. Y. Lee

Research output: Contribution to journalConference articlepeer-review


The magnetotransport in an N-type diluted magnetic semiconductors (DMS) was discussed. It was found that the negative and positive MR behaviors were hardly dependent upon magnetic anisotropy from longitudinal, transverse, perpendicular MR measurements. The analysis showed that the negative MR in the (Ga,Mn)N films was attributable to spin-disorder scattering in association with the weakly localized electrons.

Original languageEnglish
Pages (from-to)CT06
JournalDigests of the Intermag Conference
Publication statusPublished - 2003
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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