Magnetoresistance of lateral semiconductor spin valves

A. N.M. Zainuddin, Hyun Kum, D. Basu, S. Srinivasan, L. Siddiqui, P. Bhattacharya, S. Datta

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3 Citations (Scopus)


The magnetoresistance of two terminal lateral semiconductor spin valves with respect to varying mesa size is studied. It is shown theoretically that extended regions outside the spin-current path can act as an additional source of spin-relaxation, decreasing the magnetoresistance response. From a simplified expression of magnetoresistance derived from spin-diffusion equations, we show that it is important to etch away these extended regions for devices with channel lengths much smaller than the spin-diffusion length in order to achieve maximum magnetoresistance. Preliminary experimental data on a two terminal local spin valve are in good agreement with the theory established in this article.

Original languageEnglish
Article number123913
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2010 Dec 15

Bibliographical note

Funding Information:
The work is being supported by the Office of Naval Research under Grant No. N00014-09-1-0086. S.S. acknowledges funding from the Institute for Nanoelectronics Discovery and Exploration.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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