Magnetic properties of vanadium-doped silicon carbide nanowires

Han Kyu Seong; Tae Eon Park; Seung Cheol Lee; Kwang Ryeol Lee; Jae Kwan Park; Heon Jin Choi

doi:10.1007/s12540-009-0107-7

Magnetic properties of vanadium-doped silicon carbide nanowires

Han Kyu Seong, Tae Eon Park, Seung Cheol Lee, Kwang Ryeol Lee, Jae Kwan Park, Heon Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several μm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature.

Original language	English
Pages (from-to)	107-111
Number of pages	5
Journal	Metals and Materials International
Volume	15
Issue number	1
DOIs	https://doi.org/10.1007/s12540-009-0107-7
Publication status	Published - 2009 Feb

Bibliographical note

Funding Information:
This research was supported in part by a grant from the program of the National Research Laboratory of the Korean Ministry of Science and Technology (R0A-2007-000-20075-0), IT R&D program of MKE/IITA (2008-F-023-01, Next generation future device fabricated by using nano junction), the Seoul Research and Business Development Program (10816), Korea Institute of Science and Technology, and the Second Stage of Brain Korea 21 Project in 2007.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

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title = "Magnetic properties of vanadium-doped silicon carbide nanowires",

abstract = "This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several μm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature.",

author = "Seong, {Han Kyu} and Park, {Tae Eon} and Lee, {Seung Cheol} and Lee, {Kwang Ryeol} and Park, {Jae Kwan} and Choi, {Heon Jin}",

note = "Funding Information: This research was supported in part by a grant from the program of the National Research Laboratory of the Korean Ministry of Science and Technology (R0A-2007-000-20075-0), IT R&D program of MKE/IITA (2008-F-023-01, Next generation future device fabricated by using nano junction), the Seoul Research and Business Development Program (10816), Korea Institute of Science and Technology, and the Second Stage of Brain Korea 21 Project in 2007.",

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doi = "10.1007/s12540-009-0107-7",

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AU - Seong, Han Kyu

AU - Park, Tae Eon

AU - Lee, Seung Cheol

AU - Lee, Kwang Ryeol

AU - Park, Jae Kwan

AU - Choi, Heon Jin

N1 - Funding Information: This research was supported in part by a grant from the program of the National Research Laboratory of the Korean Ministry of Science and Technology (R0A-2007-000-20075-0), IT R&D program of MKE/IITA (2008-F-023-01, Next generation future device fabricated by using nano junction), the Seoul Research and Business Development Program (10816), Korea Institute of Science and Technology, and the Second Stage of Brain Korea 21 Project in 2007.

PY - 2009/2

Y1 - 2009/2

N2 - This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several μm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature.

AB - This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several μm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature.

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Magnetic properties of vanadium-doped silicon carbide nanowires

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