Magnetic InxGa1 - xN nanowires at room temperature using Cu dopant and annealing

Youn Ho Park, Ryong Ha, Tea Eon Park, Sung Wook Kim, Dongjea Seo, Heon Jin Choi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Single-crystal, Cu-doped InxGa1 - xN nanowires were grown on GaN/Al2O3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:InxGa1 - xN nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μB (1 μB × 10-24 Am2) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3-edges indicated that the doped Cu had a local magnetic moment and that its electronic configuration was mainly 3d9. It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature.

Original languageEnglish
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - 2015 Dec 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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