Magnetic and optical properties of Zn1-xMn xO thin films prepared by pulsed laser deposition

Kyung Ah Jeon; Jong Hoon Kim; W. Y. Shim; W. Y. Lee; M. H. Jung; Sang Yeol Lee

doi:10.1016/j.jcrysgro.2005.10.044

Magnetic and optical properties of Zn_1-xMn _xO thin films prepared by pulsed laser deposition

Kyung Ah Jeon, Jong Hoon Kim, W. Y. Shim, W. Y. Lee, M. H. Jung, Sang Yeol Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

28 Citations (Scopus)

Abstract

We report on ferromagnetic characteristics of Zn_1- _xMn_xO thin films grown on Al₂O₃ substrates by using pulsed laser deposition. The effects of oxygen pressure on the ferromagnetism in the Mn-doped ZnO thin films are discussed. The carrier concentration was found to be controlled by varying the oxygen pressure. By decreasing oxygen pressure, the films exhibited increases in both the lattice constant and fundamental band gap energy. Large magnetoresistance (MR) was observed in the film grown at 700°C, especially over 10% in the positive MR. The results indicate the spin splitting caused by strong s-d exchange coupling between the conducting carriers and localized spins of Mn ions.

Original language	English
Pages (from-to)	66-69
Number of pages	4
Journal	Journal of Crystal Growth
Volume	287
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.044
Publication status	Published - 2006 Jan 18
Event	Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials - Duration: 2005 Jul 3 → 2005 Jul 8

Bibliographical note

Funding Information:
This work was supported by the Government (R01-2004-000-10195-0(2004)) from the Basic Research Program of KOSEF (Korea Science and Engineering Foundation).

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2005.10.044

Cite this

@article{004bfbf0a5644b99a278001264cbe205,

title = "Magnetic and optical properties of Zn1-xMn xO thin films prepared by pulsed laser deposition",

abstract = "We report on ferromagnetic characteristics of Zn1- xMnxO thin films grown on Al2O3 substrates by using pulsed laser deposition. The effects of oxygen pressure on the ferromagnetism in the Mn-doped ZnO thin films are discussed. The carrier concentration was found to be controlled by varying the oxygen pressure. By decreasing oxygen pressure, the films exhibited increases in both the lattice constant and fundamental band gap energy. Large magnetoresistance (MR) was observed in the film grown at 700°C, especially over 10% in the positive MR. The results indicate the spin splitting caused by strong s-d exchange coupling between the conducting carriers and localized spins of Mn ions.",

keywords = "A3. Physical vapor deposition processes, B1. Zinc compounds, B2. Magnetic materials",

author = "Jeon, {Kyung Ah} and Kim, {Jong Hoon} and Shim, {W. Y.} and Lee, {W. Y.} and Jung, {M. H.} and Lee, {Sang Yeol}",

note = "Funding Information: This work was supported by the Government (R01-2004-000-10195-0(2004)) from the Basic Research Program of KOSEF (Korea Science and Engineering Foundation).; Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials ; Conference date: 03-07-2005 Through 08-07-2005",

year = "2006",

month = jan,

day = "18",

doi = "10.1016/j.jcrysgro.2005.10.044",

language = "English",

volume = "287",

pages = "66--69",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Magnetic and optical properties of Zn1-xMn xO thin films prepared by pulsed laser deposition

AU - Jeon, Kyung Ah

AU - Kim, Jong Hoon

AU - Shim, W. Y.

AU - Lee, W. Y.

AU - Jung, M. H.

AU - Lee, Sang Yeol

N1 - Funding Information: This work was supported by the Government (R01-2004-000-10195-0(2004)) from the Basic Research Program of KOSEF (Korea Science and Engineering Foundation).

PY - 2006/1/18

Y1 - 2006/1/18

N2 - We report on ferromagnetic characteristics of Zn1- xMnxO thin films grown on Al2O3 substrates by using pulsed laser deposition. The effects of oxygen pressure on the ferromagnetism in the Mn-doped ZnO thin films are discussed. The carrier concentration was found to be controlled by varying the oxygen pressure. By decreasing oxygen pressure, the films exhibited increases in both the lattice constant and fundamental band gap energy. Large magnetoresistance (MR) was observed in the film grown at 700°C, especially over 10% in the positive MR. The results indicate the spin splitting caused by strong s-d exchange coupling between the conducting carriers and localized spins of Mn ions.

AB - We report on ferromagnetic characteristics of Zn1- xMnxO thin films grown on Al2O3 substrates by using pulsed laser deposition. The effects of oxygen pressure on the ferromagnetism in the Mn-doped ZnO thin films are discussed. The carrier concentration was found to be controlled by varying the oxygen pressure. By decreasing oxygen pressure, the films exhibited increases in both the lattice constant and fundamental band gap energy. Large magnetoresistance (MR) was observed in the film grown at 700°C, especially over 10% in the positive MR. The results indicate the spin splitting caused by strong s-d exchange coupling between the conducting carriers and localized spins of Mn ions.

KW - A3. Physical vapor deposition processes

KW - B1. Zinc compounds

KW - B2. Magnetic materials

UR - http://www.scopus.com/inward/record.url?scp=29844457408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29844457408&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.10.044

DO - 10.1016/j.jcrysgro.2005.10.044

M3 - Conference article

AN - SCOPUS:29844457408

SN - 0022-0248

VL - 287

SP - 66

EP - 69

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials

Y2 - 3 July 2005 through 8 July 2005

ER -