Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films

Moon Ho Ham; Min Chang Jeong; Woo Young Lee; Jae Min Myoung; Jeung Mi Lee; Joon Yeon Chang; Suk Hee Han

doi:10.1007/s11664-004-0279-3

Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films

Moon Ho Ham, Min Chang Jeong, Woo Young Lee, Jae Min Myoung, Jeung Mi Lee, Joon Yeon Chang, Suk Hee Han

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550 - 700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.

Original language	English
Pages (from-to)	114-117
Number of pages	4
Journal	Journal of Electronic Materials
Volume	33
Issue number	2
DOIs	https://doi.org/10.1007/s11664-004-0279-3
Publication status	Published - 2004 Feb

Bibliographical note

Funding Information:
This work was supported by the Korea Basic Science Institute via Grant No. R23-2001-00020 and the KIST vision 21 Program.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-004-0279-3

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title = "Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films",

abstract = "We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550 - 700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.",

author = "Ham, {Moon Ho} and Jeong, {Min Chang} and Lee, {Woo Young} and Myoung, {Jae Min} and Lee, {Jeung Mi} and Chang, {Joon Yeon} and Han, {Suk Hee}",

note = "Funding Information: This work was supported by the Korea Basic Science Institute via Grant No. R23-2001-00020 and the KIST vision 21 Program.",

year = "2004",

month = feb,

doi = "10.1007/s11664-004-0279-3",

language = "English",

volume = "33",

pages = "114--117",

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TY - JOUR

T1 - Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films

AU - Ham, Moon Ho

AU - Jeong, Min Chang

AU - Lee, Woo Young

AU - Myoung, Jae Min

AU - Lee, Jeung Mi

AU - Chang, Joon Yeon

AU - Han, Suk Hee

N1 - Funding Information: This work was supported by the Korea Basic Science Institute via Grant No. R23-2001-00020 and the KIST vision 21 Program.

PY - 2004/2

Y1 - 2004/2

N2 - We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550 - 700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.

AB - We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550 - 700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

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Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films

Abstract

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