Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films

Moon Ho Ham, Min Chang Jeong, Woo Young Lee, Jae Min Myoung, Jeung Mi Lee, Joon Yeon Chang, Suk Hee Han

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1 Citation (Scopus)


We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550 - 700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalJournal of Electronic Materials
Issue number2
Publication statusPublished - 2004 Feb

Bibliographical note

Funding Information:
This work was supported by the Korea Basic Science Institute via Grant No. R23-2001-00020 and the KIST vision 21 Program.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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