We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The nanowires were grown on the silicon substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Superconducting quantum interference device characterization indicated that the nanowires possess ferromagnetism up to room temperature. X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions. Electrical characterization of a nanowire field effect transistor revealed the improved p-type behavior with hole mobility of 4.95 cm2/V.s.
|Number of pages||6|
|Journal||Journal of Physical Chemistry C|
|Publication status||Published - 2009 Jun 25|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films