Abstract
Si nanocrystals on p-type (1 0 0) Si substrates have been fabricated by pulsed laser deposition (PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystals have been annealed again in various gases. Nitrogen and oxygen have been used. Strong violet-indigo photoluminescence (PL) have been observed from Si nanocrystals annealed in nitrogen ambient gas. As the gas pressure during the deposition is varied, weak green and red emissions from annealed Si nanocrystals are also observed in the PL.
| Original language | English |
|---|---|
| Pages (from-to) | 87-90 |
| Number of pages | 4 |
| Journal | Optical Materials |
| Volume | 17 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2001 Jun |
| Event | Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France Duration: 2000 May 30 → 2000 Jun 2 |
Bibliographical note
Funding Information:This work was supported by the grant (No. 1999-2-114-004-5) from the interdisciplinary research program of the KOSEF.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- General Computer Science
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering