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Lg= 60 nm In0.53Ga0.47As MBCFETs: From gm-max= 13.7 mS/μm and Q = 180 to virtual-source modeling

  • J. H. Yoo
  • , H. B. Jo
  • , I. G. Lee
  • , S. M. Choi
  • , J. M. Baek
  • , S. T. Lee
  • , H. Jang
  • , M. W. Kong
  • , H. H. Kim
  • , H. J. Lee
  • , H. J. Kim
  • , H. S. Jeong
  • , W. S. Park
  • , D. H. Ko
  • , S. H. Shin
  • , H. M. Kwon
  • , S. K. Kim
  • , J. G. Kim
  • , J. Yun
  • , T. Kim
    • K. Y. Shin, T. W. Kim, J. K. Shin, J. H. Lee, C. S. Shin, K. S. Seo, D. H. Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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