Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts

In Geun Lee; Hyeon Bhin Jo; Ji Min Baek; Sang Tae Lee; Su Min Choi; Hyo Jin Kim; Wan Soo Park; Ji Hoon Yoo; Dae Hong Ko; Tae Woo Kim; Sang Kuk Kim; Jae Gyu Kim; Jacob Yun; Ted Kim; Jung Hee Lee; Chan Soo Shin; Jae Hak Lee; Kwang Seok Seo; Dae Hyun Kim

doi:10.3390/electronics11172744

L_g = 50 nm Gate-All-Around In_0.53Ga_0.47As Nanosheet MOSFETs with Regrown In_0.53Ga_0.47As Contacts

In Geun Lee, Hyeon Bhin Jo, Ji Min Baek, Sang Tae Lee, Su Min Choi, Hyo Jin Kim, Wan Soo Park, Ji Hoon Yoo, Dae Hong Ko, Tae Woo Kim, Sang Kuk Kim, Jae Gyu Kim, Jacob Yun, Ted Kim, Jung Hee Lee, Chan Soo Shin, Jae Hak Lee, Kwang Seok Seo, Dae Hyun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we report the fabrication and characterization of L_g = 50 nm Gate-All-Around (GAA) In_0.53Ga_0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In_0.53Ga_0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al₂O₃/HfO₂, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with L_g = 50 nm, W_NS = 200 nm and t_NS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (g_{m_max} = 1.86 mS/μm and I_ON = 0.4 mA/μm) at V_DS = 0.5 V. To the best of our knowledge, this is the first demonstration of In_xGa_1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices.

Original language	English
Article number	2744
Journal	Electronics (Switzerland)
Volume	11
Issue number	17
DOIs	https://doi.org/10.3390/electronics11172744
Publication status	Published - 2022 Sept

Bibliographical note

Publisher Copyright:
© 2022 by the authors.

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Signal Processing
Hardware and Architecture
Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.3390/electronics11172744

Cite this

Lee, I. G., Jo, H. B., Baek, J. M., Lee, S. T., Choi, S. M., Kim, H. J., Park, W. S., Yoo, J. H., Ko, D. H., Kim, T. W., Kim, S. K., Kim, J. G., Yun, J., Kim, T., Lee, J. H., Shin, C. S., Lee, J. H., Seo, K. S., & Kim, D. H. (2022). L_g = 50 nm Gate-All-Around In_0.53Ga_0.47As Nanosheet MOSFETs with Regrown In_0.53Ga_0.47As Contacts. Electronics (Switzerland), 11(17), Article 2744. https://doi.org/10.3390/electronics11172744

@article{e0a9605b2de24a41af114ca0b446ba82,

title = "Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts",

abstract = "In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In0.53Ga0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al2O3/HfO2, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with Lg = 50 nm, WNS = 200 nm and tNS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (gm_max = 1.86 mS/μm and ION = 0.4 mA/μm) at VDS = 0.5 V. To the best of our knowledge, this is the first demonstration of InxGa1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices.",

keywords = "Gate-All-Around (GAA), InGaAs, nanosheet (NS), selective regrowth",

author = "Lee, {In Geun} and Jo, {Hyeon Bhin} and Baek, {Ji Min} and Lee, {Sang Tae} and Choi, {Su Min} and Kim, {Hyo Jin} and Park, {Wan Soo} and Yoo, {Ji Hoon} and Ko, {Dae Hong} and Kim, {Tae Woo} and Kim, {Sang Kuk} and Kim, {Jae Gyu} and Jacob Yun and Ted Kim and Lee, {Jung Hee} and Shin, {Chan Soo} and Lee, {Jae Hak} and Seo, {Kwang Seok} and Kim, {Dae Hyun}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = sep,

doi = "10.3390/electronics11172744",

language = "English",

volume = "11",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "17",

}

Lee, IG, Jo, HB, Baek, JM, Lee, ST, Choi, SM, Kim, HJ, Park, WS, Yoo, JH, Ko, DH, Kim, TW, Kim, SK, Kim, JG, Yun, J, Kim, T, Lee, JH, Shin, CS, Lee, JH, Seo, KS & Kim, DH 2022, 'L_g = 50 nm Gate-All-Around In_0.53Ga_0.47As Nanosheet MOSFETs with Regrown In_0.53Ga_0.47As Contacts', Electronics (Switzerland), vol. 11, no. 17, 2744. https://doi.org/10.3390/electronics11172744

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T1 - Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts

AU - Lee, In Geun

AU - Jo, Hyeon Bhin

AU - Baek, Ji Min

AU - Lee, Sang Tae

AU - Choi, Su Min

AU - Kim, Hyo Jin

AU - Park, Wan Soo

AU - Yoo, Ji Hoon

AU - Ko, Dae Hong

AU - Kim, Tae Woo

AU - Kim, Sang Kuk

AU - Kim, Jae Gyu

AU - Yun, Jacob

AU - Kim, Ted

AU - Lee, Jung Hee

AU - Shin, Chan Soo

AU - Lee, Jae Hak

AU - Seo, Kwang Seok

AU - Kim, Dae Hyun

PY - 2022/9

Y1 - 2022/9

N2 - In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In0.53Ga0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al2O3/HfO2, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with Lg = 50 nm, WNS = 200 nm and tNS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (gm_max = 1.86 mS/μm and ION = 0.4 mA/μm) at VDS = 0.5 V. To the best of our knowledge, this is the first demonstration of InxGa1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices.

AB - In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In0.53Ga0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al2O3/HfO2, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with Lg = 50 nm, WNS = 200 nm and tNS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (gm_max = 1.86 mS/μm and ION = 0.4 mA/μm) at VDS = 0.5 V. To the best of our knowledge, this is the first demonstration of InxGa1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices.

KW - Gate-All-Around (GAA)

KW - InGaAs

KW - nanosheet (NS)

KW - selective regrowth

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DO - 10.3390/electronics11172744

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