Lg= 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

H. B. Jo; I. G. Lee; J. M. Baek; S. T. Lee; S. M. Choi; H. J. Kim; H. S. Jeong; W. S. Park; J. H. Yoo; H. Y. Lee; D. Y. Yun; S. W. Son; D. H. Ko; T. W. Kim; H. M. Kwon; S. K. Kim; J. G. Kim; J. Yun; T. Kim; J. H. Lee; J. H. Lee; C. S. Shin; K. S. Seo; D. H. Kim

doi:10.1109/VLSITechnologyandCir46769.2022.9830243

L_g= 130 nm GAA MBCFETs with three-level stacked In_0.53Ga_0.47As nanosheets

H. B. Jo, I. G. Lee, J. M. Baek, S. T. Lee, S. M. Choi, H. J. Kim, H. S. Jeong, W. S. Park, J. H. Yoo, H. Y. Lee, D. Y. Yun, S. W. Son, D. H. Ko, T. W. Kim, H. M. Kwon, S. K. Kim, J. G. Kim, J. Yun, T. Kim, J. H. LeeJ. H. Lee, C. S. Shin, K. S. Seo, D. H. Kim

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We demonstrate gate-all-around (GAA) multi-bridge channel FETs (MBCFETs) with sub-20 nm nanosheet thickness fabricated through an S/D regrowth process. Working devices with three-level stacked In0.53Ga0.47As nanosheets as thin as 15 nm have been fabricated using selectively regrown n+ In0.53Ga0.47As contact formation and a combination of precision dry etching and selective wet etching for In0.52Al0.48As sacrificial layers against In0.53Ga0.47As nanosheets. The devices also feature a high-k HfO2 and TiN metal gate by ALD in a cross-coupled manner, surrounding the three-level stacked In0.53Ga0.47As nanosheets. MBCFETs with Lg = 130 nm, WNS = 300 nm and tNS = 15 nm exhibit a record combination of ION = 2.2 mA/m and gm_max = 5.7 mS/m at VDS = 0.8 V, making efficient use of each multi-bridge channel along the S/D and gate width directions.

Original language	English
Title of host publication	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	397-398
Number of pages	2
ISBN (Electronic)	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830243
Publication status	Published - 2022
Event	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States Duration: 2022 Jun 12 → 2022 Jun 17

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2022-June
ISSN (Print)	0743-1562

Conference

Conference	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/Territory	United States
City	Honolulu
Period	22/6/12 → 22/6/17

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/VLSITechnologyandCir46769.2022.9830243

Cite this

Jo, H. B., Lee, I. G., Baek, J. M., Lee, S. T., Choi, S. M., Kim, H. J., Jeong, H. S., Park, W. S., Yoo, J. H., Lee, H. Y., Yun, D. Y., Son, S. W., Ko, D. H., Kim, T. W., Kwon, H. M., Kim, S. K., Kim, J. G., Yun, J., Kim, T., ... Kim, D. H. (2022). L_g= 130 nm GAA MBCFETs with three-level stacked In_0.53Ga_0.47As nanosheets. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (pp. 397-398). (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830243

@inproceedings{b4e89feb8bd94e20b402068a6f8cd3a3,

title = "Lg= 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets",

abstract = "We demonstrate gate-all-around (GAA) multi-bridge channel FETs (MBCFETs) with sub-20 nm nanosheet thickness fabricated through an S/D regrowth process. Working devices with three-level stacked In0.53Ga0.47As nanosheets as thin as 15 nm have been fabricated using selectively regrown n+ In0.53Ga0.47As contact formation and a combination of precision dry etching and selective wet etching for In0.52Al0.48As sacrificial layers against In0.53Ga0.47As nanosheets. The devices also feature a high-k HfO2 and TiN metal gate by ALD in a cross-coupled manner, surrounding the three-level stacked In0.53Ga0.47As nanosheets. MBCFETs with Lg = 130 nm, WNS = 300 nm and tNS = 15 nm exhibit a record combination of ION = 2.2 mA/m and gm_max = 5.7 mS/m at VDS = 0.8 V, making efficient use of each multi-bridge channel along the S/D and gate width directions.",

author = "Jo, {H. B.} and Lee, {I. G.} and Baek, {J. M.} and Lee, {S. T.} and Choi, {S. M.} and Kim, {H. J.} and Jeong, {H. S.} and Park, {W. S.} and Yoo, {J. H.} and Lee, {H. Y.} and Yun, {D. Y.} and Son, {S. W.} and Ko, {D. H.} and Kim, {T. W.} and Kwon, {H. M.} and Kim, {S. K.} and Kim, {J. G.} and J. Yun and T. Kim and Lee, {J. H.} and Lee, {J. H.} and Shin, {C. S.} and Seo, {K. S.} and Kim, {D. H.}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",

year = "2022",

doi = "10.1109/VLSITechnologyandCir46769.2022.9830243",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "397--398",

booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",

address = "United States",

}

Jo, HB, Lee, IG, Baek, JM, Lee, ST, Choi, SM, Kim, HJ, Jeong, HS, Park, WS, Yoo, JH, Lee, HY, Yun, DY, Son, SW, Ko, DH, Kim, TW, Kwon, HM, Kim, SK, Kim, JG, Yun, J, Kim, T, Lee, JH, Lee, JH, Shin, CS, Seo, KS & Kim, DH 2022, L_g= 130 nm GAA MBCFETs with three-level stacked In_0.53Ga_0.47As nanosheets. in 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2022-June, Institute of Electrical and Electronics Engineers Inc., pp. 397-398, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, United States, 22/6/12. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830243

L_g= 130 nm GAA MBCFETs with three-level stacked In_0.53Ga_0.47As nanosheets. / Jo, H. B.; Lee, I. G.; Baek, J. M. et al.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 397-398 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Lg= 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

AU - Jo, H. B.

AU - Lee, I. G.

AU - Baek, J. M.

AU - Lee, S. T.

AU - Choi, S. M.

AU - Kim, H. J.

AU - Jeong, H. S.

AU - Park, W. S.

AU - Yoo, J. H.

AU - Lee, H. Y.

AU - Yun, D. Y.

AU - Son, S. W.

AU - Ko, D. H.

AU - Kim, T. W.

AU - Kwon, H. M.

AU - Kim, S. K.

AU - Kim, J. G.

AU - Yun, J.

AU - Kim, T.

AU - Lee, J. H.

AU - Shin, C. S.

AU - Seo, K. S.

AU - Kim, D. H.

PY - 2022

Y1 - 2022

N2 - We demonstrate gate-all-around (GAA) multi-bridge channel FETs (MBCFETs) with sub-20 nm nanosheet thickness fabricated through an S/D regrowth process. Working devices with three-level stacked In0.53Ga0.47As nanosheets as thin as 15 nm have been fabricated using selectively regrown n+ In0.53Ga0.47As contact formation and a combination of precision dry etching and selective wet etching for In0.52Al0.48As sacrificial layers against In0.53Ga0.47As nanosheets. The devices also feature a high-k HfO2 and TiN metal gate by ALD in a cross-coupled manner, surrounding the three-level stacked In0.53Ga0.47As nanosheets. MBCFETs with Lg = 130 nm, WNS = 300 nm and tNS = 15 nm exhibit a record combination of ION = 2.2 mA/m and gm_max = 5.7 mS/m at VDS = 0.8 V, making efficient use of each multi-bridge channel along the S/D and gate width directions.

AB - We demonstrate gate-all-around (GAA) multi-bridge channel FETs (MBCFETs) with sub-20 nm nanosheet thickness fabricated through an S/D regrowth process. Working devices with three-level stacked In0.53Ga0.47As nanosheets as thin as 15 nm have been fabricated using selectively regrown n+ In0.53Ga0.47As contact formation and a combination of precision dry etching and selective wet etching for In0.52Al0.48As sacrificial layers against In0.53Ga0.47As nanosheets. The devices also feature a high-k HfO2 and TiN metal gate by ALD in a cross-coupled manner, surrounding the three-level stacked In0.53Ga0.47As nanosheets. MBCFETs with Lg = 130 nm, WNS = 300 nm and tNS = 15 nm exhibit a record combination of ION = 2.2 mA/m and gm_max = 5.7 mS/m at VDS = 0.8 V, making efficient use of each multi-bridge channel along the S/D and gate width directions.

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U2 - 10.1109/VLSITechnologyandCir46769.2022.9830243

DO - 10.1109/VLSITechnologyandCir46769.2022.9830243

M3 - Conference contribution

AN - SCOPUS:85135215308

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 397

EP - 398

BT - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

Y2 - 12 June 2022 through 17 June 2022

ER -

Jo HB, Lee IG, Baek JM, Lee ST, Choi SM, Kim HJ et al. L_g= 130 nm GAA MBCFETs with three-level stacked In_0.53Ga_0.47As nanosheets. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 397-398. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830243