Lowering contact resistance by SWCNT-Al bilayer electrodes in solution processable metal-oxide thin film transistor

Su Jeong Lee; Tae Il Lee; Jee Ho Park; Il Kwon Oh; Hyungjun Kim; Jung Han Kim; Chul Hong Kim; Gee Sung Chae; Hong Koo Baik; Jae Min Myoung

doi:10.1039/c4tc02431a

Lowering contact resistance by SWCNT-Al bilayer electrodes in solution processable metal-oxide thin film transistor

Su Jeong Lee, Tae Il Lee, Jee Ho Park, Il Kwon Oh, Hyungjun Kim, Jung Han Kim, Chul Hong Kim, Gee Sung Chae, Hong Koo Baik, Jae Min Myoung

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A single-wall carbon nanotube-aluminium (SWCNT)-Al bilayer was developed as an electrode for a high-performance solution processable thin film transistor (TFT). The contact resistance was systematically lowered by inserting an Al layer between the SWCNTs and the indium oxide. The performance of the device was considerably enhanced by adopting the SWCNT-Al bilayer electrodes, because of the enlargement of the contact area of the electrodes and the formation of an Ohmic contact between the electrodes and the semiconductor. The TFT using the SWCNT-Al bilayer electrodes shows a threshold voltage of 0.45 V, a mobility of 4.50 cm² V^-1 s and an I_on/I_off of 6.86 × 10⁵.

Original language	English
Pages (from-to)	1403-1407
Number of pages	5
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	6
DOIs	https://doi.org/10.1039/c4tc02431a
Publication status	Published - 2015 Feb 14

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Publisher Copyright:
© 2015 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Chemistry

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10.1039/c4tc02431a

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title = "Lowering contact resistance by SWCNT-Al bilayer electrodes in solution processable metal-oxide thin film transistor",

abstract = "A single-wall carbon nanotube-aluminium (SWCNT)-Al bilayer was developed as an electrode for a high-performance solution processable thin film transistor (TFT). The contact resistance was systematically lowered by inserting an Al layer between the SWCNTs and the indium oxide. The performance of the device was considerably enhanced by adopting the SWCNT-Al bilayer electrodes, because of the enlargement of the contact area of the electrodes and the formation of an Ohmic contact between the electrodes and the semiconductor. The TFT using the SWCNT-Al bilayer electrodes shows a threshold voltage of 0.45 V, a mobility of 4.50 cm2 V-1 s and an Ion/Ioff of 6.86 × 105.",

author = "Lee, {Su Jeong} and Lee, {Tae Il} and Park, {Jee Ho} and Oh, {Il Kwon} and Hyungjun Kim and Kim, {Jung Han} and Kim, {Chul Hong} and Chae, {Gee Sung} and Baik, {Hong Koo} and Myoung, {Jae Min}",

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doi = "10.1039/c4tc02431a",

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AU - Lee, Su Jeong

AU - Lee, Tae Il

AU - Park, Jee Ho

AU - Oh, Il Kwon

AU - Kim, Hyungjun

AU - Kim, Jung Han

AU - Kim, Chul Hong

AU - Chae, Gee Sung

AU - Baik, Hong Koo

AU - Myoung, Jae Min

PY - 2015/2/14

Y1 - 2015/2/14

N2 - A single-wall carbon nanotube-aluminium (SWCNT)-Al bilayer was developed as an electrode for a high-performance solution processable thin film transistor (TFT). The contact resistance was systematically lowered by inserting an Al layer between the SWCNTs and the indium oxide. The performance of the device was considerably enhanced by adopting the SWCNT-Al bilayer electrodes, because of the enlargement of the contact area of the electrodes and the formation of an Ohmic contact between the electrodes and the semiconductor. The TFT using the SWCNT-Al bilayer electrodes shows a threshold voltage of 0.45 V, a mobility of 4.50 cm2 V-1 s and an Ion/Ioff of 6.86 × 105.

AB - A single-wall carbon nanotube-aluminium (SWCNT)-Al bilayer was developed as an electrode for a high-performance solution processable thin film transistor (TFT). The contact resistance was systematically lowered by inserting an Al layer between the SWCNTs and the indium oxide. The performance of the device was considerably enhanced by adopting the SWCNT-Al bilayer electrodes, because of the enlargement of the contact area of the electrodes and the formation of an Ohmic contact between the electrodes and the semiconductor. The TFT using the SWCNT-Al bilayer electrodes shows a threshold voltage of 0.45 V, a mobility of 4.50 cm2 V-1 s and an Ion/Ioff of 6.86 × 105.

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Lowering contact resistance by SWCNT-Al bilayer electrodes in solution processable metal-oxide thin film transistor

Abstract

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