Lowerature Ohmic Contact to Monolayer MoS₂ by van der Waals Bonded Co/h-BN Electrodes

Monolayer MoS₂, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve lowerature Ohmic contacts to monolayer MoS₂, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kÎ.μm at a carrier density of 5.3 × 10¹²/cm². This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS₂ at much lower carrier densities compared to previous work.