Low-voltage pentacene field-effect transistors based on P(S-r-BCB-r-MMA) gate dielectrics

Song Hee Koo, Thomas P. Russell, Craig J. Hawker, Du Yeol Ryu, Hwa Sung Lee, Jeong Ho Cho

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One of the key issues in the research of organic field-effect transistors (OFETs) is the low-voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross-linking. The pentacene FETs based on the 34 nm-thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of 0.25 cm 2/Vs, a threshold voltage of -2 V, an sub-threshold slope of 400 mV/decade, and an on/off current ratio of ~10 5. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.

Original languageEnglish
Pages (from-to)551-554
Number of pages4
JournalApplied Chemistry for Engineering
Issue number5
Publication statusPublished - 2011 Oct

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)


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