Low-voltage green transistor using ultra shallow junction and hetero-tunneling

Anupama Bowonder; Pratik Patel; Kanghoon Jeon; Jungwoo Oh; Prashant Majhi; Hsing Huang Tseng; Chenming Hu

doi:10.1109/IWJT.2008.4540025

Low-voltage green transistor using ultra shallow junction and hetero-tunneling

Anupama Bowonder, Pratik Patel, Kanghoon Jeon, Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Chenming Hu

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

38 Citations (Scopus)

Abstract

A novel hetero-tunnel transistor (HtFET) with a heterostructure and ultra shallow junction parallel to the dielectric interface is proposed for low-voltage (low-power) electronics. Its potential of scaling V_dd down to 0.2 V is examined with quantum mechanical tunneling theory. Data from high-K metal-gate, Si on Ge hetero-tunnel transistor verifies the HtFET concept.

Original language	English
Title of host publication	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages	93-96
Number of pages	4
DOIs	https://doi.org/10.1109/IWJT.2008.4540025
Publication status	Published - 2008
Event	IWJT-2008 - International Workshop on Junction Technology - Shanghai, China Duration: 2008 May 15 → 2008 May 16

Publication series

Name	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

Other	IWJT-2008 - International Workshop on Junction Technology
Country/Territory	China
City	Shanghai
Period	08/5/15 → 08/5/16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IWJT.2008.4540025

Cite this

Bowonder, A., Patel, P., Jeon, K., Oh, J., Majhi, P., Tseng, H. H., & Hu, C. (2008). Low-voltage green transistor using ultra shallow junction and hetero-tunneling. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 93-96). [4540025] (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540025

@inproceedings{95266f4ec18b43adb830c571f8b6d947,

title = "Low-voltage green transistor using ultra shallow junction and hetero-tunneling",

abstract = "A novel hetero-tunnel transistor (HtFET) with a heterostructure and ultra shallow junction parallel to the dielectric interface is proposed for low-voltage (low-power) electronics. Its potential of scaling Vdd down to 0.2 V is examined with quantum mechanical tunneling theory. Data from high-K metal-gate, Si on Ge hetero-tunnel transistor verifies the HtFET concept.",

author = "Anupama Bowonder and Pratik Patel and Kanghoon Jeon and Jungwoo Oh and Prashant Majhi and Tseng, {Hsing Huang} and Chenming Hu",

year = "2008",

doi = "10.1109/IWJT.2008.4540025",

language = "English",

isbn = "9781424417384",

series = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

pages = "93--96",

booktitle = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

note = "IWJT-2008 - International Workshop on Junction Technology ; Conference date: 15-05-2008 Through 16-05-2008",

}

Bowonder, A, Patel, P, Jeon, K, Oh, J, Majhi, P, Tseng, HH & Hu, C 2008, Low-voltage green transistor using ultra shallow junction and hetero-tunneling. in IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology., 4540025, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology, pp. 93-96, IWJT-2008 - International Workshop on Junction Technology, Shanghai, China, 08/5/15. https://doi.org/10.1109/IWJT.2008.4540025

Low-voltage green transistor using ultra shallow junction and hetero-tunneling. / Bowonder, Anupama; Patel, Pratik; Jeon, Kanghoon et al.
IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 93-96 4540025 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Low-voltage green transistor using ultra shallow junction and hetero-tunneling

AU - Bowonder, Anupama

AU - Patel, Pratik

AU - Jeon, Kanghoon

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Hu, Chenming

PY - 2008

Y1 - 2008

N2 - A novel hetero-tunnel transistor (HtFET) with a heterostructure and ultra shallow junction parallel to the dielectric interface is proposed for low-voltage (low-power) electronics. Its potential of scaling Vdd down to 0.2 V is examined with quantum mechanical tunneling theory. Data from high-K metal-gate, Si on Ge hetero-tunnel transistor verifies the HtFET concept.

AB - A novel hetero-tunnel transistor (HtFET) with a heterostructure and ultra shallow junction parallel to the dielectric interface is proposed for low-voltage (low-power) electronics. Its potential of scaling Vdd down to 0.2 V is examined with quantum mechanical tunneling theory. Data from high-K metal-gate, Si on Ge hetero-tunnel transistor verifies the HtFET concept.

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U2 - 10.1109/IWJT.2008.4540025

DO - 10.1109/IWJT.2008.4540025

M3 - Conference contribution

AN - SCOPUS:50849096106

SN - 9781424417384

T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

SP - 93

EP - 96

BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

T2 - IWJT-2008 - International Workshop on Junction Technology

Y2 - 15 May 2008 through 16 May 2008

ER -

Low-voltage green transistor using ultra shallow junction and hetero-tunneling

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