Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

Kwang H. Lee; Jeong M. Choi; Seongil Im; Byoung H. Lee; Kyo K. Im; Myung M. Sung; Seungjun Lee

doi:10.1063/1.2786595

Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

Kwang H. Lee, Jeong M. Choi, Seongil Im, Byoung H. Lee, Kyo K. Im, Myung M. Sung, Seungjun Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.

Original language	English
Article number	123502
Journal	Applied Physics Letters
Volume	91
Issue number	12
DOIs	https://doi.org/10.1063/1.2786595
Publication status	Published - 2007

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KOSEF (Program No. Ml-0214-00-0228) and Brain Korea 21 Project.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2786595

Cite this

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title = "Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric",

abstract = "The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.",

author = "Lee, {Kwang H.} and Choi, {Jeong M.} and Seongil Im and Lee, {Byoung H.} and Im, {Kyo K.} and Sung, {Myung M.} and Seungjun Lee",

note = "Funding Information: The authors acknowledge the financial support from KOSEF (Program No. Ml-0214-00-0228) and Brain Korea 21 Project.",

year = "2007",

doi = "10.1063/1.2786595",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

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T1 - Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

AU - Lee, Kwang H.

AU - Choi, Jeong M.

AU - Im, Seongil

AU - Lee, Byoung H.

AU - Im, Kyo K.

AU - Sung, Myung M.

AU - Lee, Seungjun

N1 - Funding Information: The authors acknowledge the financial support from KOSEF (Program No. Ml-0214-00-0228) and Brain Korea 21 Project.

PY - 2007

Y1 - 2007

N2 - The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.

AB - The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.

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Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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