Low Voltage and Ferroelectric 2D Electron Devices Using Lead-Free BaxSr1-xTiO3 and MoS2 Channel

Yeonsu Jeong, Hye Jin Jin, Ji Hoon Park, Yongjae Cho, Minju Kim, Sungjae Hong, William Jo, Yeonjin Yi, Seongil Im

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Coupling between non-toxic lead-free high-k materials and 2D semiconductors is achieved to develop low voltage field effect transistors (FETs) and ferroelectric non-volatile memory transistors as well. In fact, low voltage switching ferroelectric memory devices are extremely rare in 2D electronics. Now, both low voltage operation and ferroelectric memory function have been successfully demonstrated in 2D-like thin MoS2 channel FET with lead-free high-k dielectric BaxSr1-xTiO3 (BST) oxides. When the BST surface is coated with a 5.5-nm-ultrathin poly(methyl methacrylate) (PMMA)-brush for improved roughness, the MoS2 FET with BST (x = 0.5) dielectric results in an extremely low voltage operation at 0.5 V. Moreover, the BST with an increased Ba composition (x = 0.8) induces quite good ferroelectric memory properties despite the existence of the ultrathin PMMA layer, well switching the MoS2 FET channel states in a non-volatile manner with a ±3 V low voltage pulse. Since the employed high-k dielectric and ferroelectric oxides are lead-free in particular, the approaches for applying high-k BST gate oxide for 2D MoS2 FET are not only novel but also practical towards future low voltage nanoelectronics and green technology.

Original languageEnglish
Article number1908210
JournalAdvanced Functional Materials
Issue number7
Publication statusPublished - 2020 Feb 1

Bibliographical note

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • General Chemistry
  • General Materials Science
  • Electrochemistry
  • Biomaterials


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