Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling

Yongsuk Choi, Junmo Kang, Deep Jariwala, Spencer A. Wells, Moon Sung Kang, Tobin J. Marks, Mark C. Hersam, Jeong Ho Cho

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenides and black phosphorus. The coupling of the layers is achieved following device fabrication by laminating an ion gel layer over an oxide-gated 2D FET through solution-casting methods. While the original pristine 2D FET requires tens of volts for gating through the oxide layer, the laminated ion gel layer reduces the operating voltage to below 4 V even when the same underlying substrate is used as the back gate electrode. Moreover, this capacitive coupling approach allows low-voltage operation without compromising the off-current level, which often occurs when ion gel electrolytes are directly employed as the gate dielectric material. This approach can likely be generalized to a wide variety of thin-film FETs as a postfabrication method for reducing operating voltages and power consumption.

Original languageEnglish
Pages (from-to)4008-4013
Number of pages6
JournalChemistry of Materials
Issue number9
Publication statusPublished - 2017 May 9

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry


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