Low Thermal Conductivity and High Thermoelectric Performance in In4Se3−x with Phase-Separated Indium Inclusions

Pankaj Kumar Rawat; Hwanjoo Park; Junphil Hwang; Woochul Kim

doi:10.1007/s11664-016-5174-1

Low Thermal Conductivity and High Thermoelectric Performance in In₄Se_3−x with Phase-Separated Indium Inclusions

Pankaj Kumar Rawat, Hwanjoo Park, Junphil Hwang, Woochul Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report the thermoelectric properties of undoped hot-pressed In₄Se_3−x (x = 0.05). Stoichiometric imbalance due to selenium deficiency in In₄Se₃ was found to create a secondary phase of elemental indium in the host material. Heat treatment drove grain growth and increased the indium solubility in In₄Se₃. Indium-rich domains at grain surfaces/boundaries in untreated samples were found to redistribute inside the grains and their junctions after heat treatment. Due to enhanced phonon scattering by secondary phase of indium, very low values of thermal conductivity were observed for all samples, leading to a maximum thermoelectric figure of merit (zT) of 1.13 at 723 K along the hot-pressing direction for the heat-treated sample.

Original language	English
Pages (from-to)	1444-1450
Number of pages	7
Journal	Journal of Electronic Materials
Volume	46
Issue number	3
DOIs	https://doi.org/10.1007/s11664-016-5174-1
Publication status	Published - 2017 Mar 1

Bibliographical note

Publisher Copyright:
© 2016, The Minerals, Metals & Materials Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1007/s11664-016-5174-1

Cite this

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title = "Low Thermal Conductivity and High Thermoelectric Performance in In4Se3−x with Phase-Separated Indium Inclusions",

abstract = "We report the thermoelectric properties of undoped hot-pressed In4Se3−x (x = 0.05). Stoichiometric imbalance due to selenium deficiency in In4Se3 was found to create a secondary phase of elemental indium in the host material. Heat treatment drove grain growth and increased the indium solubility in In4Se3. Indium-rich domains at grain surfaces/boundaries in untreated samples were found to redistribute inside the grains and their junctions after heat treatment. Due to enhanced phonon scattering by secondary phase of indium, very low values of thermal conductivity were observed for all samples, leading to a maximum thermoelectric figure of merit (zT) of 1.13 at 723 K along the hot-pressing direction for the heat-treated sample.",

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AB - We report the thermoelectric properties of undoped hot-pressed In4Se3−x (x = 0.05). Stoichiometric imbalance due to selenium deficiency in In4Se3 was found to create a secondary phase of elemental indium in the host material. Heat treatment drove grain growth and increased the indium solubility in In4Se3. Indium-rich domains at grain surfaces/boundaries in untreated samples were found to redistribute inside the grains and their junctions after heat treatment. Due to enhanced phonon scattering by secondary phase of indium, very low values of thermal conductivity were observed for all samples, leading to a maximum thermoelectric figure of merit (zT) of 1.13 at 723 K along the hot-pressing direction for the heat-treated sample.

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