A solution-processed ZrO2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO2 film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO2 films (about 10-9 A/cm2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO2 gate insulator had a saturation mobility of 0.10 cm2/V·s and an on/off ratio of 1.17 × 10 4.
All Science Journal Classification (ASJC) codes
- General Chemical Engineering
- General Materials Science
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering