Low-temperature soluble InZnO thin film transistors by microwave annealing

Keunkyu Song; Young Koo Chang; Taehwan Jun; Daehee Lee; Youngmin Jeong; Jooho Moon

doi:10.1016/j.jcrysgro.2011.01.044

Low-temperature soluble InZnO thin film transistors by microwave annealing

Keunkyu Song, Young Koo Chang, Taehwan Jun, Daehee Lee, Youngmin Jeong, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Low-temperature solution-deposited thin film transistors (TFTs) involving solgel derived indium zinc oxide (IZO) as active layers is reported. Microwave annealing is shown to afford the fabrication of low-temperature processable TFTs. Solution-processed IZO-TFTs prepared at 150 °C by microwave irradiation have shown enhanced device characteristics of 0.1 cm² V^-1 s^-1 mobility and a ∼10⁶ on/off current ratio, a threshold voltage of 8.1, and a subthreshold slope of 3.3 V/decade. From the results of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), we confirmed that the device improvement originates from better crystallization at low temperature made possible by the use of microwave irradiation. Our findings suggest that solution-processable oxide semiconductors have potential for low-temperature and high-performance applications in transparent flexible devices.

Original language	English
Pages (from-to)	23-27
Number of pages	5
Journal	Journal of Crystal Growth
Volume	326
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.044
Publication status	Published - 2011 Jul 1

Bibliographical note

Funding Information:
This work was supported by the Mid-career Researcher Program through an NRF Grant funded by the MEST ( 2009-0086302 ). It was also partially supported by the Second Stage of the Brain Korea 21 Project . In addition, we acknowledge the Pohang Accelerator Laboratory (PAL) for conducting the XRD measurements.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2011.01.044

Cite this

@article{392d88d5e52a42d2bd09216ff43fc26d,

title = "Low-temperature soluble InZnO thin film transistors by microwave annealing",

abstract = "Low-temperature solution-deposited thin film transistors (TFTs) involving solgel derived indium zinc oxide (IZO) as active layers is reported. Microwave annealing is shown to afford the fabrication of low-temperature processable TFTs. Solution-processed IZO-TFTs prepared at 150 °C by microwave irradiation have shown enhanced device characteristics of 0.1 cm2 V-1 s-1 mobility and a ∼106 on/off current ratio, a threshold voltage of 8.1, and a subthreshold slope of 3.3 V/decade. From the results of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), we confirmed that the device improvement originates from better crystallization at low temperature made possible by the use of microwave irradiation. Our findings suggest that solution-processable oxide semiconductors have potential for low-temperature and high-performance applications in transparent flexible devices.",

author = "Keunkyu Song and Chang, {Young Koo} and Taehwan Jun and Daehee Lee and Youngmin Jeong and Jooho Moon",

note = "Funding Information: This work was supported by the Mid-career Researcher Program through an NRF Grant funded by the MEST ( 2009-0086302 ). It was also partially supported by the Second Stage of the Brain Korea 21 Project . In addition, we acknowledge the Pohang Accelerator Laboratory (PAL) for conducting the XRD measurements.",

year = "2011",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2011.01.044",

language = "English",

volume = "326",

pages = "23--27",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Low-temperature soluble InZnO thin film transistors by microwave annealing

AU - Song, Keunkyu

AU - Chang, Young Koo

AU - Jun, Taehwan

AU - Lee, Daehee

AU - Jeong, Youngmin

AU - Moon, Jooho

N1 - Funding Information: This work was supported by the Mid-career Researcher Program through an NRF Grant funded by the MEST ( 2009-0086302 ). It was also partially supported by the Second Stage of the Brain Korea 21 Project . In addition, we acknowledge the Pohang Accelerator Laboratory (PAL) for conducting the XRD measurements.

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Low-temperature solution-deposited thin film transistors (TFTs) involving solgel derived indium zinc oxide (IZO) as active layers is reported. Microwave annealing is shown to afford the fabrication of low-temperature processable TFTs. Solution-processed IZO-TFTs prepared at 150 °C by microwave irradiation have shown enhanced device characteristics of 0.1 cm2 V-1 s-1 mobility and a ∼106 on/off current ratio, a threshold voltage of 8.1, and a subthreshold slope of 3.3 V/decade. From the results of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), we confirmed that the device improvement originates from better crystallization at low temperature made possible by the use of microwave irradiation. Our findings suggest that solution-processable oxide semiconductors have potential for low-temperature and high-performance applications in transparent flexible devices.

AB - Low-temperature solution-deposited thin film transistors (TFTs) involving solgel derived indium zinc oxide (IZO) as active layers is reported. Microwave annealing is shown to afford the fabrication of low-temperature processable TFTs. Solution-processed IZO-TFTs prepared at 150 °C by microwave irradiation have shown enhanced device characteristics of 0.1 cm2 V-1 s-1 mobility and a ∼106 on/off current ratio, a threshold voltage of 8.1, and a subthreshold slope of 3.3 V/decade. From the results of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), we confirmed that the device improvement originates from better crystallization at low temperature made possible by the use of microwave irradiation. Our findings suggest that solution-processable oxide semiconductors have potential for low-temperature and high-performance applications in transparent flexible devices.

UR - http://www.scopus.com/inward/record.url?scp=79960155950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960155950&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.01.044

DO - 10.1016/j.jcrysgro.2011.01.044

M3 - Article

AN - SCOPUS:79960155950

SN - 0022-0248

VL - 326

SP - 23

EP - 27

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Low-temperature soluble InZnO thin film transistors by microwave annealing

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this