Low-Temperature Selective Growth of Tungsten Oxide Nanowires by Controlled Nanoscale Stress Induction

Hyungjoo Na; Youngkee Eun; Min Ook Kim; Jungwook Choi; Jongbaeg Kim

doi:10.1038/srep18265

Low-Temperature Selective Growth of Tungsten Oxide Nanowires by Controlled Nanoscale Stress Induction

Hyungjoo Na, Youngkee Eun, Min Ook Kim, Jungwook Choi, Jongbaeg Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WO_x) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WO_x thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750-900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WO x nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature.

Original language	English
Article number	18265
Journal	Scientific reports
Volume	5
DOIs	https://doi.org/10.1038/srep18265
Publication status	Published - 2015 Dec 15

Bibliographical note

Funding Information:
H.N. and Y.E. contributed equally to this work. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012R1A1A2043661). This work was also supported by the Smart IT Convergence System Research Center funded by the Ministry of Education, Science and Technology as a “Global Frontier Project” (2012M3A6A6054201) and Korea Ministry of Environment as “The Converging Technology Program”. The authors thank Mr. Kisik Koh for the help in operating FIB.

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title = "Low-Temperature Selective Growth of Tungsten Oxide Nanowires by Controlled Nanoscale Stress Induction",

abstract = "We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WOx thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750-900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WO x nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature.",

author = "Hyungjoo Na and Youngkee Eun and Kim, {Min Ook} and Jungwook Choi and Jongbaeg Kim",

note = "Funding Information: H.N. and Y.E. contributed equally to this work. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012R1A1A2043661). This work was also supported by the Smart IT Convergence System Research Center funded by the Ministry of Education, Science and Technology as a “Global Frontier Project” (2012M3A6A6054201) and Korea Ministry of Environment as “The Converging Technology Program”. The authors thank Mr. Kisik Koh for the help in operating FIB.",

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AU - Kim, Jongbaeg

N1 - Funding Information: H.N. and Y.E. contributed equally to this work. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012R1A1A2043661). This work was also supported by the Smart IT Convergence System Research Center funded by the Ministry of Education, Science and Technology as a “Global Frontier Project” (2012M3A6A6054201) and Korea Ministry of Environment as “The Converging Technology Program”. The authors thank Mr. Kisik Koh for the help in operating FIB.

PY - 2015/12/15

Y1 - 2015/12/15

N2 - We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WOx thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750-900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WO x nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature.

AB - We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WOx thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750-900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WO x nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature.

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Low-Temperature Selective Growth of Tungsten Oxide Nanowires by Controlled Nanoscale Stress Induction

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