TY - GEN
T1 - Low-temperature reactions at metal-semiconductor interfaces
AU - Sinclair, R.
AU - Konno, T.
AU - Ko, D. H.
AU - Ogawa, S.
PY - 1991
Y1 - 1991
N2 - In this article we consider the interfacial reactions which occur at several metal-semiconductor interfaces. When there is a large free energy of mixing, amorphous phase formation can precede crystal phase nucleation, and this is illustrated by Ti-Si and Pt-GaAs contacts. On the other hand, for a phase separating system (Al-Si), amorphization is not observed, but instead low-temperature (approximately 180°C) silicon crystallization is confirmed.
AB - In this article we consider the interfacial reactions which occur at several metal-semiconductor interfaces. When there is a large free energy of mixing, amorphous phase formation can precede crystal phase nucleation, and this is illustrated by Ti-Si and Pt-GaAs contacts. On the other hand, for a phase separating system (Al-Si), amorphization is not observed, but instead low-temperature (approximately 180°C) silicon crystallization is confirmed.
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M3 - Conference contribution
AN - SCOPUS:0026360381
SN - 0854984062
T3 - Institute of Physics Conference Series
SP - 283
EP - 287
BT - Institute of Physics Conference Series
PB - Publ by Inst of Physics Publ Ltd
T2 - Proceedings of the Conference on Microscopy of Semiconducting Materials 1991
Y2 - 25 March 1991 through 28 March 1991
ER -