Low-temperature process for advanced Si thin film transistor technology

Takashi Noguchi, Jang Yeon Kwon, Ji Sim Jung, Jong Man Kim, Kyung Bae Park, Hyuck Lim, Do Young Kim, Hans S. Cho, Hua Xian Yin, Wenxyu Xianyu

Research output: Contribution to journalReview articlepeer-review

9 Citations (Scopus)


Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.

Original languageEnglish
Pages (from-to)4321-4324
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number5 B
Publication statusPublished - 2006 May 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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