Low temperature poly-Si thin film transistor on plastic substrates

Jang Yeon Kwon; Do Young Kim; Hans S. Cho; Kyung Bae Park; Ji Sim Jung; Jong Man Kim; Young Soo Park; Takashi Noguchi

doi:10.1093/ietele/e88-c.4.667

Low temperature poly-Si thin film transistor on plastic substrates

Jang Yeon Kwon, Do Young Kim, Hans S. Cho, Kyung Bae Park, Ji Sim Jung, Jong Man Kim, Young Soo Park, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Poly-Si TFT (Thin Film transistor) fabricated below 170°.C using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm ²/Vsec.

Original language	English
Pages (from-to)	667-671
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E88-C
Issue number	4
DOIs	https://doi.org/10.1093/ietele/e88-c.4.667
Publication status	Published - 2005 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1093/ietele/e88-c.4.667

Cite this

@article{919115e0121a41b1918d9fe83113b401,

title = "Low temperature poly-Si thin film transistor on plastic substrates",

abstract = "Poly-Si TFT (Thin Film transistor) fabricated below 170°.C using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm 2/Vsec.",

author = "Kwon, {Jang Yeon} and Kim, {Do Young} and Cho, {Hans S.} and Park, {Kyung Bae} and Jung, {Ji Sim} and Kim, {Jong Man} and Park, {Young Soo} and Takashi Noguchi",

year = "2005",

month = apr,

doi = "10.1093/ietele/e88-c.4.667",

language = "English",

volume = "E88-C",

pages = "667--671",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "4",

}

TY - JOUR

T1 - Low temperature poly-Si thin film transistor on plastic substrates

AU - Kwon, Jang Yeon

AU - Kim, Do Young

AU - Cho, Hans S.

AU - Park, Kyung Bae

AU - Jung, Ji Sim

AU - Kim, Jong Man

AU - Park, Young Soo

AU - Noguchi, Takashi

PY - 2005/4

Y1 - 2005/4

N2 - Poly-Si TFT (Thin Film transistor) fabricated below 170°.C using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm 2/Vsec.

AB - Poly-Si TFT (Thin Film transistor) fabricated below 170°.C using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm 2/Vsec.

UR - http://www.scopus.com/inward/record.url?scp=33644503601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644503601&partnerID=8YFLogxK

U2 - 10.1093/ietele/e88-c.4.667

DO - 10.1093/ietele/e88-c.4.667

M3 - Article

AN - SCOPUS:33644503601

SN - 0916-8524

VL - E88-C

SP - 667

EP - 671

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 4

ER -

Low temperature poly-Si thin film transistor on plastic substrates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this