Low temperature poly-Si TFT technology

T. Noguchi; D. Y. Kim; J. Y. Kwon; K. B. Park; J. S. Jung; W. X. Xianyu; H. X. Yin; H. S. Cho

doi:10.1557/proc-814-i1.4

Low temperature poly-Si TFT technology

T. Noguchi, D. Y. Kim, J. Y. Kwon, K. B. Park, J. S. Jung, W. X. Xianyu, H. X. Yin, H. S. Cho

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Low temperature poly-Si TFT technology is reviewed and is discussed from a view point of device, fabrication process, and its possibility as FPD (Flat Panel Display) application. After the appearance of crystallization technique of SPC (Solid Phase Crystallization) using FA (Furnace Annealing) or ELA (Excimer Laser Annealing) using UV (Ultra-Violet) beam, the electronic property of poly-Si thin-film, which relates to the crystalinity of the grains, was improved drastically, and the process temperature for the TFT fabrication had been reduced below 600°C down to 400°C. As a result, improvement of device characteristic of poly-Si TFT such as an enhancement of carrier mobility or a reduction of leakage current has been studied intensively for the application to FPD (Flat Panel Display) on glass. Currently, extensive study is being done in order to realize a more functional SOG (System on Glass). By reducing the TFT process temperature down to 200°C or below and by modifying a design for the device structure or the circuit in the pixel, O-LED (Organic LED) FPD addressed by uniform poly-Si TFTs is expected to mount on flexible plastic substrate such as on PES (PolyEtherSulphone). The poly-Si TFT has a possibility to develop as a smart system on plastic panel for unique applications as well as the conventional Si LSI in the ubiquitous IT (Information Technology) era.

Original language	English
Pages (from-to)	7-14
Number of pages	8
Journal	Materials Research Society Symposium Proceedings
Volume	814
DOIs	https://doi.org/10.1557/proc-814-i1.4
Publication status	Published - 2004
Event	Flexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States Duration: 2004 Apr 13 → 2004 Apr 16

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-814-i1.4

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title = "Low temperature poly-Si TFT technology",

abstract = "Low temperature poly-Si TFT technology is reviewed and is discussed from a view point of device, fabrication process, and its possibility as FPD (Flat Panel Display) application. After the appearance of crystallization technique of SPC (Solid Phase Crystallization) using FA (Furnace Annealing) or ELA (Excimer Laser Annealing) using UV (Ultra-Violet) beam, the electronic property of poly-Si thin-film, which relates to the crystalinity of the grains, was improved drastically, and the process temperature for the TFT fabrication had been reduced below 600°C down to 400°C. As a result, improvement of device characteristic of poly-Si TFT such as an enhancement of carrier mobility or a reduction of leakage current has been studied intensively for the application to FPD (Flat Panel Display) on glass. Currently, extensive study is being done in order to realize a more functional SOG (System on Glass). By reducing the TFT process temperature down to 200°C or below and by modifying a design for the device structure or the circuit in the pixel, O-LED (Organic LED) FPD addressed by uniform poly-Si TFTs is expected to mount on flexible plastic substrate such as on PES (PolyEtherSulphone). The poly-Si TFT has a possibility to develop as a smart system on plastic panel for unique applications as well as the conventional Si LSI in the ubiquitous IT (Information Technology) era.",

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T1 - Low temperature poly-Si TFT technology

AU - Noguchi, T.

AU - Kim, D. Y.

AU - Kwon, J. Y.

AU - Park, K. B.

AU - Jung, J. S.

AU - Xianyu, W. X.

AU - Yin, H. X.

AU - Cho, H. S.

PY - 2004

Y1 - 2004

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AB - Low temperature poly-Si TFT technology is reviewed and is discussed from a view point of device, fabrication process, and its possibility as FPD (Flat Panel Display) application. After the appearance of crystallization technique of SPC (Solid Phase Crystallization) using FA (Furnace Annealing) or ELA (Excimer Laser Annealing) using UV (Ultra-Violet) beam, the electronic property of poly-Si thin-film, which relates to the crystalinity of the grains, was improved drastically, and the process temperature for the TFT fabrication had been reduced below 600°C down to 400°C. As a result, improvement of device characteristic of poly-Si TFT such as an enhancement of carrier mobility or a reduction of leakage current has been studied intensively for the application to FPD (Flat Panel Display) on glass. Currently, extensive study is being done in order to realize a more functional SOG (System on Glass). By reducing the TFT process temperature down to 200°C or below and by modifying a design for the device structure or the circuit in the pixel, O-LED (Organic LED) FPD addressed by uniform poly-Si TFTs is expected to mount on flexible plastic substrate such as on PES (PolyEtherSulphone). The poly-Si TFT has a possibility to develop as a smart system on plastic panel for unique applications as well as the conventional Si LSI in the ubiquitous IT (Information Technology) era.

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T2 - Flexible Electronics 2004 - Materials and Device Technology

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Low temperature poly-Si TFT technology

Abstract

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