Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric

Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Woo Soon Jang, Jin Young Oh, Soo Sang Chae, Hong Koo Baik

Research output: Contribution to journalArticlepeer-review

162 Citations (Scopus)


We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide (ZrO2) dielectric with a maximum temperature of 350 °C. The formation of ZrO2 films was investigated by TG-DTA, FT-IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H2O 2). The H2O2 forms peroxo groups in the ZrO2 film producing a dense-amorphous phase and a smooth surface film. Because of these characteristics, the ZrO2 film successfully blocked leakage current even in annealing at 300 °C. Finally, to demonstrate that the ZrO2 film is dielectric, we fabricated thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on ZrO2 films at 350 °C. These TFTs had a mobility of 7.21 cm2/(V s), a threshold voltage (Vth) of 3.22 V, and a Vth shift of 1.6 V under positive gate bias stress.

Original languageEnglish
Pages (from-to)410-417
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number2
Publication statusPublished - 2013 Jan 23

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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