Low temperature grown polycrystalline La0.7 Sr0.3 Mn O3 thin films on amorphous Si O2 substrates by rf magnetron sputtering

Sun Gyu Choi; A. Sivasankar Reddy; Hyung Ho Park; Woo Seok Yang; Hojun Ryu; Byoung Gon Yu

doi:10.1116/1.3125265

Low temperature grown polycrystalline La_0.7 Sr_0.3 Mn O₃ thin films on amorphous Si O₂ substrates by rf magnetron sputtering

Sun Gyu Choi, A. Sivasankar Reddy, Hyung Ho Park, Woo Seok Yang, Hojun Ryu, Byoung Gon Yu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The La_0.7 Sr_0.3 Mn O₃ thin films have been prepared on amorphous Si O₂ substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature.

Original language	English
Pages (from-to)	595-600
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	27
Issue number	4
DOIs	https://doi.org/10.1116/1.3125265
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/IITA (2006-S054-01, Development of CMOS based MEMS processed multifunctional sensor for ubiquitous environment). This work was supported by the second stage of Brain Korea 21 project in 2008. The experiments at the PLS were supported in part by the MOST and the POSTECH.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.3125265

Cite this

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title = "Low temperature grown polycrystalline La0.7 Sr0.3 Mn O3 thin films on amorphous Si O2 substrates by rf magnetron sputtering",

abstract = "The La0.7 Sr0.3 Mn O3 thin films have been prepared on amorphous Si O2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature.",

author = "Choi, {Sun Gyu} and {Sivasankar Reddy}, A. and Park, {Hyung Ho} and Yang, {Woo Seok} and Hojun Ryu and Yu, {Byoung Gon}",

note = "Funding Information: This work was supported by the IT R&D program of MKE/IITA (2006-S054-01, Development of CMOS based MEMS processed multifunctional sensor for ubiquitous environment). This work was supported by the second stage of Brain Korea 21 project in 2008. The experiments at the PLS were supported in part by the MOST and the POSTECH.",

year = "2009",

doi = "10.1116/1.3125265",

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T1 - Low temperature grown polycrystalline La0.7 Sr0.3 Mn O3 thin films on amorphous Si O2 substrates by rf magnetron sputtering

AU - Choi, Sun Gyu

AU - Sivasankar Reddy, A.

AU - Park, Hyung Ho

AU - Yang, Woo Seok

AU - Ryu, Hojun

AU - Yu, Byoung Gon

N1 - Funding Information: This work was supported by the IT R&D program of MKE/IITA (2006-S054-01, Development of CMOS based MEMS processed multifunctional sensor for ubiquitous environment). This work was supported by the second stage of Brain Korea 21 project in 2008. The experiments at the PLS were supported in part by the MOST and the POSTECH.

PY - 2009

Y1 - 2009

N2 - The La0.7 Sr0.3 Mn O3 thin films have been prepared on amorphous Si O2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature.

AB - The La0.7 Sr0.3 Mn O3 thin films have been prepared on amorphous Si O2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature.

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