Low temperature conduction and scattering behavior of Ga-doped ZnO

Byung Du Ahn; Sang Hoon Oh; Hyun Jae Kim; Myung Hwa Jung; Young Gun Ko

doi:10.1063/1.2824857

Low temperature conduction and scattering behavior of Ga-doped ZnO

Byung Du Ahn, Sang Hoon Oh, Hyun Jae Kim, Myung Hwa Jung, Young Gun Ko

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

This paper dealt with the electrical properties of Ga:ZnO film deposited via pulsed laser deposition and the mechanisms responsible for conduction and scattering behavior in terms of temperature. Such film having a degenerate band exhibited the metallic characteristics except those observed below 100 and 60 K for films fabricated at 298 and 773 K, respectively. This metal semiconductor transition (MST) was explained based on weakly localized electrons found in disorder conductor. It was found that the predominant scattering mechanism was ionized-impurity scattering below MST region, while lattice vibration and grain boundary scattering were important in the regime above MST temperature.

Original language	English
Article number	252109
Journal	Applied Physics Letters
Volume	91
Issue number	25
DOIs	https://doi.org/10.1063/1.2824857
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [No. R0A-2007-000-10044-0(2007)] and was also partly supported by Korea Research Foundation (KRF-2007–357–D00136)

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2824857

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@article{a61690e974214544b36e66969bf2b527,

title = "Low temperature conduction and scattering behavior of Ga-doped ZnO",

abstract = "This paper dealt with the electrical properties of Ga:ZnO film deposited via pulsed laser deposition and the mechanisms responsible for conduction and scattering behavior in terms of temperature. Such film having a degenerate band exhibited the metallic characteristics except those observed below 100 and 60 K for films fabricated at 298 and 773 K, respectively. This metal semiconductor transition (MST) was explained based on weakly localized electrons found in disorder conductor. It was found that the predominant scattering mechanism was ionized-impurity scattering below MST region, while lattice vibration and grain boundary scattering were important in the regime above MST temperature.",

author = "Ahn, {Byung Du} and Oh, {Sang Hoon} and Kim, {Hyun Jae} and Jung, {Myung Hwa} and Ko, {Young Gun}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [No. R0A-2007-000-10044-0(2007)] and was also partly supported by Korea Research Foundation (KRF-2007–357–D00136)",

year = "2007",

doi = "10.1063/1.2824857",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Low temperature conduction and scattering behavior of Ga-doped ZnO

AU - Ahn, Byung Du

AU - Oh, Sang Hoon

AU - Kim, Hyun Jae

AU - Jung, Myung Hwa

AU - Ko, Young Gun

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [No. R0A-2007-000-10044-0(2007)] and was also partly supported by Korea Research Foundation (KRF-2007–357–D00136)

PY - 2007

Y1 - 2007

N2 - This paper dealt with the electrical properties of Ga:ZnO film deposited via pulsed laser deposition and the mechanisms responsible for conduction and scattering behavior in terms of temperature. Such film having a degenerate band exhibited the metallic characteristics except those observed below 100 and 60 K for films fabricated at 298 and 773 K, respectively. This metal semiconductor transition (MST) was explained based on weakly localized electrons found in disorder conductor. It was found that the predominant scattering mechanism was ionized-impurity scattering below MST region, while lattice vibration and grain boundary scattering were important in the regime above MST temperature.

AB - This paper dealt with the electrical properties of Ga:ZnO film deposited via pulsed laser deposition and the mechanisms responsible for conduction and scattering behavior in terms of temperature. Such film having a degenerate band exhibited the metallic characteristics except those observed below 100 and 60 K for films fabricated at 298 and 773 K, respectively. This metal semiconductor transition (MST) was explained based on weakly localized electrons found in disorder conductor. It was found that the predominant scattering mechanism was ionized-impurity scattering below MST region, while lattice vibration and grain boundary scattering were important in the regime above MST temperature.

UR - http://www.scopus.com/inward/record.url?scp=37549040173&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37549040173&partnerID=8YFLogxK

U2 - 10.1063/1.2824857

DO - 10.1063/1.2824857

M3 - Article

AN - SCOPUS:37549040173

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252109

ER -

Low temperature conduction and scattering behavior of Ga-doped ZnO

Abstract

Bibliographical note

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