Low-Temperature, aqueous-solution-processed zinc tin oxide thin film transistor

Jee Ho Park, Won Jin Choi, Jin Young Oh, Soo Sang Chae, Woo Soon Jang, Se Jong Lee, Kie Moon Song, Hong Koo Baik

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12 Citations (Scopus)


We fabricate solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The solution used is prepared by precipitating metal hydroxide using NaOH and dissolving it using NH4OH. The X-ray diffraction (XRD) data of the spin-coated ZTO film demonstrates an amorphous phase, and the atomic force microscopy (AFM) image shows a smooth surface. The device performance of solution-processed TFTs was analyzed as a function of annealing temperature. The fabricated TFTs were operated in the enhancement mode, and exhibited a carrier mobility of 3.03 cm2 V-1 s-1, a threshold voltage of 10.2 V, an on/off current ratio of 1.23 × 107, a subthreshold slope of 0.78 V/decade, and high transparency (with ∼ransmittance) at a low annealing temperature of 300 °C.

Original languageEnglish
Article number070201
JournalJapanese journal of applied physics
Issue number7 PART 1
Publication statusPublished - 2011 Jul

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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