Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

Eun Ha Kim; Dae Hong Ko; Siyoung Choi; Bong Young Yoo; Hyeon Deok Lee

doi:10.1007/s11664-999-0253-1

Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

Eun Ha Kim, Dae Hong Ko, Siyoung Choi, Bong Young Yoo, Hyeon Deok Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450 °C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500 °C. The first formed phase is Ti₅Si₃ in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500 °C, the Ti₅Si₄ phase and C49 TiSi₂ phase formed in the regions close to Ti films and Si substrates, respectively.

Original language	English
Pages (from-to)	L20-L23
Journal	Journal of Electronic Materials
Volume	28
Issue number	10
DOIs	https://doi.org/10.1007/s11664-999-0253-1
Publication status	Published - 1999 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates",

abstract = "We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450 °C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500 °C. The first formed phase is Ti5Si3 in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500 °C, the Ti5Si4 phase and C49 TiSi2 phase formed in the regions close to Ti films and Si substrates, respectively.",

author = "Kim, {Eun Ha} and Ko, {Dae Hong} and Siyoung Choi and Yoo, {Bong Young} and Lee, {Hyeon Deok}",

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T1 - Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

AU - Kim, Eun Ha

AU - Ko, Dae Hong

AU - Choi, Siyoung

AU - Yoo, Bong Young

AU - Lee, Hyeon Deok

PY - 1999/10

Y1 - 1999/10

N2 - We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450 °C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500 °C. The first formed phase is Ti5Si3 in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500 °C, the Ti5Si4 phase and C49 TiSi2 phase formed in the regions close to Ti films and Si substrates, respectively.

AB - We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450 °C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500 °C. The first formed phase is Ti5Si3 in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500 °C, the Ti5Si4 phase and C49 TiSi2 phase formed in the regions close to Ti films and Si substrates, respectively.

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Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

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