We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450 °C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500 °C. The first formed phase is Ti5Si3 in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500 °C, the Ti5Si4 phase and C49 TiSi2 phase formed in the regions close to Ti films and Si substrates, respectively.
|Journal||Journal of Electronic Materials|
|Publication status||Published - 1999 Oct|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry