Abstract
A low-temperature solution-processable inorganic vanadium oxide (V 2 O 5 ) hole injection layer (HIL) was synthesized for flexible quantum-dot light-emitting diodes (QLEDs). Efficient hole injection characteristics were observed in the hole-only devices; furthermore, the process temperature of V 2 O 5 was as low as 30 °C. We investigated the source of the efficient hole injection behavior using ultraviolet and x-ray photoelectron spectroscopy. The density of gap states was found to increase in accordance with process temperature reduction. Therefore, QLEDs with low-temperature solution-processable V 2 O 5 HILs were fabricated on a glass substrate, which showed excellent characteristics. The maximum luminance and luminous efficiency of the device were 56,717 Cd/m 2 and 4.03 Cd/A, respectively. Due to the low-temperature process of the V 2 O 5 HIL, it was also possible to fabricate QLEDs on a flexible plastic substrate without mechanical or thermal deformation of the substrate. Our results suggest that the low-temperature V 2 O 5 inorganic HIL is a feasible alternative to organic HILs for flexible QLEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 657-662 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 19 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2019 Jun |
Bibliographical note
Publisher Copyright:© 2019 Korean Physical Society
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)