Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits

Hoonhee Han; Rino Choi; Seong Ook Jung; Sung Woo Chung; Byung Jin Cho; S. C. Song; Changhwan Choi

doi:10.1109/IEDM13553.2020.9372102

Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits

Hoonhee Han, Rino Choi, Seong Ook Jung, Sung Woo Chung, Byung Jin Cho, S. C. Song, Changhwan Choi

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

We demonstrated low temperature (< 500 °C) and hydrogen ion-cut based monolithic 3D (M3D) process integration platform with CMOS circuits, memory devices and photo-sensitive sensors. Top Si layer was transferred on the 8-inch bottom Si substrate having standard CMOS circuits using hydrogen ion implantation, bonding and cleavage under low thermal annealing. Ta2O5-RRAM and a-IGZO photo detector devices on the upper transferred Si layer were vertically stacked with CMOS circuits. Bonding and top Si layer transfer are considerably affected by ion implantation process, ILD, surface treatment, oxide CMP and annealing. Different light intensity to photodetector at the upper layer modulates the frequency of current sensor with 21 stage ring- oscillator at the lower layer and current level in RRAM at the upper layer is also modulated by input frequency from CMOS devices. The functionalities of ion-cut based M3D integration platform are confirmed by higher frequency and current level with respect to light intensity.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15.6.1-15.6.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9372102
Publication status	Published - 2020 Dec 12
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: 2020 Dec 12 → 2020 Dec 18

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	20/12/12 → 20/12/18

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM13553.2020.9372102

Cite this

Han, H., Choi, R., Jung, S. O., Chung, S. W., Cho, B. J., Song, S. C., & Choi, C. (2020). Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 15.6.1-15.6.4). Article 9372102 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9372102

Han, Hoonhee ; Choi, Rino ; Jung, Seong Ook et al. / Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits. 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 15.6.1-15.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits",

abstract = "We demonstrated low temperature (< 500 °C) and hydrogen ion-cut based monolithic 3D (M3D) process integration platform with CMOS circuits, memory devices and photo-sensitive sensors. Top Si layer was transferred on the 8-inch bottom Si substrate having standard CMOS circuits using hydrogen ion implantation, bonding and cleavage under low thermal annealing. Ta2O5-RRAM and a-IGZO photo detector devices on the upper transferred Si layer were vertically stacked with CMOS circuits. Bonding and top Si layer transfer are considerably affected by ion implantation process, ILD, surface treatment, oxide CMP and annealing. Different light intensity to photodetector at the upper layer modulates the frequency of current sensor with 21 stage ring- oscillator at the lower layer and current level in RRAM at the upper layer is also modulated by input frequency from CMOS devices. The functionalities of ion-cut based M3D integration platform are confirmed by higher frequency and current level with respect to light intensity.",

author = "Hoonhee Han and Rino Choi and Jung, {Seong Ook} and Chung, {Sung Woo} and Cho, {Byung Jin} and Song, {S. C.} and Changhwan Choi",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

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doi = "10.1109/IEDM13553.2020.9372102",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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Han, H, Choi, R, Jung, SO, Chung, SW, Cho, BJ, Song, SC & Choi, C 2020, Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9372102, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 15.6.1-15.6.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 20/12/12. https://doi.org/10.1109/IEDM13553.2020.9372102

Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits. / Han, Hoonhee; Choi, Rino; Jung, Seong Ook et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 15.6.1-15.6.4 9372102 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits

AU - Han, Hoonhee

AU - Choi, Rino

AU - Jung, Seong Ook

AU - Chung, Sung Woo

AU - Cho, Byung Jin

AU - Song, S. C.

AU - Choi, Changhwan

PY - 2020/12/12

Y1 - 2020/12/12

N2 - We demonstrated low temperature (< 500 °C) and hydrogen ion-cut based monolithic 3D (M3D) process integration platform with CMOS circuits, memory devices and photo-sensitive sensors. Top Si layer was transferred on the 8-inch bottom Si substrate having standard CMOS circuits using hydrogen ion implantation, bonding and cleavage under low thermal annealing. Ta2O5-RRAM and a-IGZO photo detector devices on the upper transferred Si layer were vertically stacked with CMOS circuits. Bonding and top Si layer transfer are considerably affected by ion implantation process, ILD, surface treatment, oxide CMP and annealing. Different light intensity to photodetector at the upper layer modulates the frequency of current sensor with 21 stage ring- oscillator at the lower layer and current level in RRAM at the upper layer is also modulated by input frequency from CMOS devices. The functionalities of ion-cut based M3D integration platform are confirmed by higher frequency and current level with respect to light intensity.

AB - We demonstrated low temperature (< 500 °C) and hydrogen ion-cut based monolithic 3D (M3D) process integration platform with CMOS circuits, memory devices and photo-sensitive sensors. Top Si layer was transferred on the 8-inch bottom Si substrate having standard CMOS circuits using hydrogen ion implantation, bonding and cleavage under low thermal annealing. Ta2O5-RRAM and a-IGZO photo detector devices on the upper transferred Si layer were vertically stacked with CMOS circuits. Bonding and top Si layer transfer are considerably affected by ion implantation process, ILD, surface treatment, oxide CMP and annealing. Different light intensity to photodetector at the upper layer modulates the frequency of current sensor with 21 stage ring- oscillator at the lower layer and current level in RRAM at the upper layer is also modulated by input frequency from CMOS devices. The functionalities of ion-cut based M3D integration platform are confirmed by higher frequency and current level with respect to light intensity.

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M3 - Conference contribution

AN - SCOPUS:85102961994

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 15.6.1-15.6.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

Han H, Choi R, Jung SO, Chung SW, Cho BJ, Song SC et al. Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 15.6.1-15.6.4. 9372102. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9372102

Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

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