We investigated the effects of high-pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a-IGZO) channel layer at 100C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Issue number||Book 3|
|Publication status||Published - 2015 Jun 1|
|Event||2015 SID International Symposium - San Jose, United States|
Duration: 2015 Jun 4 → …
Bibliographical noteFunding Information:
This work was supported by Samsung Display and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011 -0028819).
© 2015 SID.
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