Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing

Won Gi Kim; Young Jun Tak; Tae Soo Jung; Sung Pyo Park; Heesoo Lee; Jeong Woo Park; Hyun Jae Kim

doi:10.1002/sdtp.10070

Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing

Won Gi Kim, Young Jun Tak, Tae Soo Jung, Sung Pyo Park, Heesoo Lee, Jeong Woo Park, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We investigated the effects of high-pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a-IGZO) channel layer at 100C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.

Original language	English
Pages (from-to)	1231-1233
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	46
Issue number	Book 3
DOIs	https://doi.org/10.1002/sdtp.10070
Publication status	Published - 2015 Jun 1
Event	2015 SID International Symposium - San Jose, United States Duration: 2015 Jun 4 → …

Bibliographical note

Funding Information:
This work was supported by Samsung Display and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011 -0028819).

Publisher Copyright:
© 2015 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1002/sdtp.10070

Cite this

@article{9938951ae3d6463f96cc8b1495832c53,

title = "Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing",

abstract = "We investigated the effects of high-pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a-IGZO) channel layer at 100C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.",

author = "Kim, {Won Gi} and Tak, {Young Jun} and Jung, {Tae Soo} and Park, {Sung Pyo} and Heesoo Lee and Park, {Jeong Woo} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by Samsung Display and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011 -0028819). Publisher Copyright: {\textcopyright} 2015 SID.; 2015 SID International Symposium ; Conference date: 04-06-2015",

year = "2015",

month = jun,

day = "1",

doi = "10.1002/sdtp.10070",

language = "English",

volume = "46",

pages = "1231--1233",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "Book 3",

}

TY - JOUR

T1 - Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing

AU - Kim, Won Gi

AU - Tak, Young Jun

AU - Jung, Tae Soo

AU - Park, Sung Pyo

AU - Lee, Heesoo

AU - Park, Jeong Woo

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by Samsung Display and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011 -0028819). Publisher Copyright: © 2015 SID.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We investigated the effects of high-pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a-IGZO) channel layer at 100C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.

AB - We investigated the effects of high-pressure annealing as a source of activation energy to form the amorphous indium gallium zinc oxide (a-IGZO) channel layer at 100C. Thermal activation under oxygen pressure was used to facilitate the formation of channel layer as well as to improve positive bias stress stability.

UR - http://www.scopus.com/inward/record.url?scp=84962663096&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962663096&partnerID=8YFLogxK

U2 - 10.1002/sdtp.10070

DO - 10.1002/sdtp.10070

M3 - Conference article

AN - SCOPUS:84962663096

SN - 0097-966X

VL - 46

SP - 1231

EP - 1233

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - Book 3

T2 - 2015 SID International Symposium

Y2 - 4 June 2015

ER -

Low Temperature activation of In-Ga-Zn-O thin film transistor using high pressure annealing

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this