Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory

Hyun Kook Park; Byungkyu Song; Seong Ook Jung

doi:10.23919/ELINFOCOM.2018.8330716

Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory

Hyun Kook Park
, Byungkyu Song
, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Nonvolatile ternary content addressable-memory (NV-TCAM) has been widely researched because of its great advantages, such as, zero standby power consumption and compact area. However, previous NV-TCAMs suffer from process variation, DC current, and leakage current, leading to the search and write reliabilities degradation and high power consumption. In this paper, we propose a novel 13T-4R NV-TCAM cell with fully symmetric structure and a current limiter which improves the DC and leakage current problems of previous NV-TCAM cells. The proposed scheme is verified using HSPICE Monte Carlo simulation with 22-nm CMOS process and industry mimic MTJ model. The simulation results prove that the proposed scheme reduces the DC current by more than 60% and eliminates the leakage current, leading to the large power saving, while satisfies the target search yield of 4σ.

Original language	English
Title of host publication	International Conference on Electronics, Information and Communication, ICEIC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538647547
DOIs	https://doi.org/10.23919/ELINFOCOM.2018.8330716
Publication status	Published - 2018 Apr 2
Event	17th International Conference on Electronics, Information and Communication, ICEIC 2018 - Honolulu, United States Duration: 2018 Jan 24 → 2018 Jan 27

Publication series

Name	International Conference on Electronics, Information and Communication, ICEIC 2018
Volume	2018-January

Other

Other	17th International Conference on Electronics, Information and Communication, ICEIC 2018
Country/Territory	United States
City	Honolulu
Period	18/1/24 → 18/1/27

Bibliographical note

Publisher Copyright:
© 2018 Institute of Electronics and Information Engineers.

All Science Journal Classification (ASJC) codes

Information Systems
Computer Networks and Communications
Computer Science Applications
Signal Processing
Electrical and Electronic Engineering

Access to Document

10.23919/ELINFOCOM.2018.8330716

Cite this

Park, H. K., Song, B., & Jung, S. O. (2018). Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. In International Conference on Electronics, Information and Communication, ICEIC 2018 (pp. 1-4). (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2018.8330716

Park, Hyun Kook ; Song, Byungkyu ; Jung, Seong Ook. / Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4 (International Conference on Electronics, Information and Communication, ICEIC 2018).

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title = "Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory",

abstract = "Nonvolatile ternary content addressable-memory (NV-TCAM) has been widely researched because of its great advantages, such as, zero standby power consumption and compact area. However, previous NV-TCAMs suffer from process variation, DC current, and leakage current, leading to the search and write reliabilities degradation and high power consumption. In this paper, we propose a novel 13T-4R NV-TCAM cell with fully symmetric structure and a current limiter which improves the DC and leakage current problems of previous NV-TCAM cells. The proposed scheme is verified using HSPICE Monte Carlo simulation with 22-nm CMOS process and industry mimic MTJ model. The simulation results prove that the proposed scheme reduces the DC current by more than 60\% and eliminates the leakage current, leading to the large power saving, while satisfies the target search yield of 4σ.",

keywords = "Low search power, magnetic tunnel junction (MTJ), nonvolatile TCAM (NV-TCAM), ternary content addressable-memory (TCAM)",

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Park, HK, Song, B & Jung, SO 2018, Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. in International Conference on Electronics, Information and Communication, ICEIC 2018. International Conference on Electronics, Information and Communication, ICEIC 2018, vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 17th International Conference on Electronics, Information and Communication, ICEIC 2018, Honolulu, United States, 18/1/24. https://doi.org/10.23919/ELINFOCOM.2018.8330716

Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. / Park, Hyun Kook; Song, Byungkyu; Jung, Seong Ook.
International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4 (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Nonvolatile ternary content addressable-memory (NV-TCAM) has been widely researched because of its great advantages, such as, zero standby power consumption and compact area. However, previous NV-TCAMs suffer from process variation, DC current, and leakage current, leading to the search and write reliabilities degradation and high power consumption. In this paper, we propose a novel 13T-4R NV-TCAM cell with fully symmetric structure and a current limiter which improves the DC and leakage current problems of previous NV-TCAM cells. The proposed scheme is verified using HSPICE Monte Carlo simulation with 22-nm CMOS process and industry mimic MTJ model. The simulation results prove that the proposed scheme reduces the DC current by more than 60% and eliminates the leakage current, leading to the large power saving, while satisfies the target search yield of 4σ.

AB - Nonvolatile ternary content addressable-memory (NV-TCAM) has been widely researched because of its great advantages, such as, zero standby power consumption and compact area. However, previous NV-TCAMs suffer from process variation, DC current, and leakage current, leading to the search and write reliabilities degradation and high power consumption. In this paper, we propose a novel 13T-4R NV-TCAM cell with fully symmetric structure and a current limiter which improves the DC and leakage current problems of previous NV-TCAM cells. The proposed scheme is verified using HSPICE Monte Carlo simulation with 22-nm CMOS process and industry mimic MTJ model. The simulation results prove that the proposed scheme reduces the DC current by more than 60% and eliminates the leakage current, leading to the large power saving, while satisfies the target search yield of 4σ.

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Park HK, Song B, Jung SO. Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory. In International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4. (International Conference on Electronics, Information and Communication, ICEIC 2018). doi: 10.23919/ELINFOCOM.2018.8330716

Low search power and high reliability 13T-4R MTJ based nonvolatile ternary content-addressable memory

Abstract

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