Low power SRAM bitcell design for near-Threshold operation

Juhyun Park; Hanwool Jeong; Hyun Jun Kim; Seong Ook Jung

doi:10.1109/ICCE-Asia.2016.7804767

Low power SRAM bitcell design for near-Threshold operation

Juhyun Park, Hanwool Jeong, Hyun Jun Kim, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Near-Threshold voltage (Vth) operating circuit is necessary for battery-operated devices. Especially, static random access memory (SRAM) design is important in near-Vth region because it is vulnerable to Vth variation. The conventional 6T SRAM bitcell design for super-Vth operation cannot be used for near-Vth operation because Vth variation in near-Vth region is more serious than that in super-Vth region. In addition, error correction code (ECC) is required to achieve high read stability and write ability yields. In this paper, bitcell yield according to ECC type in SRAM is analyzed and the efficient near-Vth bitcell design is determined with considering area overhead in 65nm technology.

Original language	English
Title of host publication	2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509027439
DOIs	https://doi.org/10.1109/ICCE-Asia.2016.7804767
Publication status	Published - 2017 Jan 3
Event	2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016 - Seoul, Korea, Republic of Duration: 2016 Oct 26 → 2016 Oct 28

Publication series

Name	2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016

Other

Other	2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016
Country/Territory	Korea, Republic of
City	Seoul
Period	16/10/26 → 16/10/28

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/ICCE-Asia.2016.7804767

Cite this

Park, J., Jeong, H., Kim, H. J., & Jung, S. O. (2017). Low power SRAM bitcell design for near-Threshold operation. In 2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016 Article 7804767 (2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCE-Asia.2016.7804767

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title = "Low power SRAM bitcell design for near-Threshold operation",

abstract = "Near-Threshold voltage (Vth) operating circuit is necessary for battery-operated devices. Especially, static random access memory (SRAM) design is important in near-Vth region because it is vulnerable to Vth variation. The conventional 6T SRAM bitcell design for super-Vth operation cannot be used for near-Vth operation because Vth variation in near-Vth region is more serious than that in super-Vth region. In addition, error correction code (ECC) is required to achieve high read stability and write ability yields. In this paper, bitcell yield according to ECC type in SRAM is analyzed and the efficient near-Vth bitcell design is determined with considering area overhead in 65nm technology.",

keywords = "6T static random access, Error correction code, Low power, Near-Threshold operation",

author = "Juhyun Park and Hanwool Jeong and Kim, {Hyun Jun} and Jung, {Seong Ook}",

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doi = "10.1109/ICCE-Asia.2016.7804767",

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Park, J, Jeong, H, Kim, HJ & Jung, SO 2017, Low power SRAM bitcell design for near-Threshold operation. in 2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016., 7804767, 2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016, Seoul, Korea, Republic of, 16/10/26. https://doi.org/10.1109/ICCE-Asia.2016.7804767

Low power SRAM bitcell design for near-Threshold operation. / Park, Juhyun; Jeong, Hanwool; Kim, Hyun Jun et al.
2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7804767 (2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Low power SRAM bitcell design for near-Threshold operation

AU - Park, Juhyun

AU - Jeong, Hanwool

AU - Kim, Hyun Jun

AU - Jung, Seong Ook

PY - 2017/1/3

Y1 - 2017/1/3

N2 - Near-Threshold voltage (Vth) operating circuit is necessary for battery-operated devices. Especially, static random access memory (SRAM) design is important in near-Vth region because it is vulnerable to Vth variation. The conventional 6T SRAM bitcell design for super-Vth operation cannot be used for near-Vth operation because Vth variation in near-Vth region is more serious than that in super-Vth region. In addition, error correction code (ECC) is required to achieve high read stability and write ability yields. In this paper, bitcell yield according to ECC type in SRAM is analyzed and the efficient near-Vth bitcell design is determined with considering area overhead in 65nm technology.

AB - Near-Threshold voltage (Vth) operating circuit is necessary for battery-operated devices. Especially, static random access memory (SRAM) design is important in near-Vth region because it is vulnerable to Vth variation. The conventional 6T SRAM bitcell design for super-Vth operation cannot be used for near-Vth operation because Vth variation in near-Vth region is more serious than that in super-Vth region. In addition, error correction code (ECC) is required to achieve high read stability and write ability yields. In this paper, bitcell yield according to ECC type in SRAM is analyzed and the efficient near-Vth bitcell design is determined with considering area overhead in 65nm technology.

KW - 6T static random access

KW - Error correction code

KW - Low power

KW - Near-Threshold operation

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BT - 2016 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2016

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ER -

Low power SRAM bitcell design for near-Threshold operation

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