Abstract
The conventional magnetic RAM (MRAM) LUTs for non-volatile field programmable gate arrays (FPGA) have excellent overall power characteristics for read and static modes but sufficient reliability of data operation has not been met due to the large process variations in the cell process technology. The novel MRAM LUT proposed in this paper can serve to enhance the reliability, reduce the power significantly and reduce implementation size by structuring multi-context in a single MRAM LUT. In an efficient manner, based on the output transition rate of 15%, the proposed 6-input MRAM LUT with 8-context shows 49.6% smaller power consumption and 18.1% smaller area compared to those of the 8 6-input SRAM LUTs.
Original language | English |
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Title of host publication | Proceedings - International SoC Design Conference 2017, ISOCC 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 107-108 |
Number of pages | 2 |
ISBN (Electronic) | 9781538622858 |
DOIs | |
Publication status | Published - 2018 May 29 |
Event | 14th International SoC Design Conference, ISOCC 2017 - Seoul, Korea, Republic of Duration: 2017 Nov 5 → 2017 Nov 8 |
Publication series
Name | Proceedings - International SoC Design Conference 2017, ISOCC 2017 |
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Other
Other | 14th International SoC Design Conference, ISOCC 2017 |
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Country/Territory | Korea, Republic of |
City | Seoul |
Period | 17/11/5 → 17/11/8 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials