TY - GEN
T1 - Low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN
AU - Myoung, Seong Sik
AU - Cheon, Sang Hoon
AU - Yook, Jong Gwan
PY - 2005
Y1 - 2005
N2 - This paper presents a low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. Previous LNAs based on FET series such as HEMT show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base doping concentration. The proposed LNA is fully integrated in area of 0.9 × 0.9 mm2 single chip with high Q spiral inductors and MIM capacitors and biased at current point for optimum noise figure and gain characteristics, furthermore, excellent linearity is achieved. Measured result of the proposed LNA shows 13 dB gain, 2.1 dB noise figure, and excellent linearity in terms of IIP3 of 5.5 dBm. The figure of merit (FOM) defined as a function of the linearity and noise figure is 20.1 dB, which is the best result among previous LNAs.
AB - This paper presents a low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. Previous LNAs based on FET series such as HEMT show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base doping concentration. The proposed LNA is fully integrated in area of 0.9 × 0.9 mm2 single chip with high Q spiral inductors and MIM capacitors and biased at current point for optimum noise figure and gain characteristics, furthermore, excellent linearity is achieved. Measured result of the proposed LNA shows 13 dB gain, 2.1 dB noise figure, and excellent linearity in terms of IIP3 of 5.5 dBm. The figure of merit (FOM) defined as a function of the linearity and noise figure is 20.1 dB, which is the best result among previous LNAs.
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M3 - Conference contribution
AN - SCOPUS:33847311484
SN - 8890201207
SN - 9788890201202
T3 - GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
SP - 89
EP - 92
BT - GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
T2 - GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Y2 - 3 October 2005 through 4 October 2005
ER -