Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

H. S. Shin; J. H. Yum; D. W. Johnson; H. R. Harris; Todd W. Hudnall; J. Oh; P. Kirsch; W. E. Wang; C. W. Bielawski; S. K. Banerjee; J. C. Lee; H. D. Lee

doi:10.1063/1.4833815

Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd W. Hudnall, J. Oh, P. Kirsch, W. E. Wang, C. W. Bielawski, S. K. Banerjee, J. C. Lee, H. D. Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

Original language	English
Article number	223504
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4833815
Publication status	Published - 2013 Nov 25

Bibliographical note

Funding Information:
This research was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2012R1A1B6003567). This work was also supported in global internship program by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4833815

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Shin, H. S., Yum, J. H., Johnson, D. W., Harris, H. R., Hudnall, T. W., Oh, J., Kirsch, P., Wang, W. E., Bielawski, C. W., Banerjee, S. K., Lee, J. C., & Lee, H. D. (2013). Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors. Applied Physics Letters, 103(22), Article 223504. https://doi.org/10.1063/1.4833815

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title = "Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors",

abstract = "In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.",

author = "Shin, {H. S.} and Yum, {J. H.} and Johnson, {D. W.} and Harris, {H. R.} and Hudnall, {Todd W.} and J. Oh and P. Kirsch and Wang, {W. E.} and Bielawski, {C. W.} and Banerjee, {S. K.} and Lee, {J. C.} and Lee, {H. D.}",

note = "Funding Information: This research was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2012R1A1B6003567). This work was also supported in global internship program by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST).",

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doi = "10.1063/1.4833815",

language = "English",

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journal = "Applied Physics Letters",

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Shin, HS, Yum, JH, Johnson, DW, Harris, HR, Hudnall, TW, Oh, J, Kirsch, P, Wang, WE, Bielawski, CW, Banerjee, SK, Lee, JC & Lee, HD 2013, 'Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors', Applied Physics Letters, vol. 103, no. 22, 223504. https://doi.org/10.1063/1.4833815

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T1 - Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

AU - Shin, H. S.

AU - Yum, J. H.

AU - Johnson, D. W.

AU - Harris, H. R.

AU - Hudnall, Todd W.

AU - Oh, J.

AU - Kirsch, P.

AU - Wang, W. E.

AU - Bielawski, C. W.

AU - Banerjee, S. K.

AU - Lee, J. C.

AU - Lee, H. D.

N1 - Funding Information: This research was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2012R1A1B6003567). This work was also supported in global internship program by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST).

PY - 2013/11/25

Y1 - 2013/11/25

N2 - In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

AB - In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

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Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

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