Low-Energy Consumption Write Circuit using Comparing Operation in STT-MRAM

Seungjin Lee, Taegun Yim, Hongil Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this paper, a method is proposed to reduce the write energy consumption in order to reduce the energy consumption of the circuit composed of spin-torque transfer magnetic RAM(STT-MRAM). Of the total energy consumption of the circuit, the write energy consumption occupies a large proportion. Omission of unnecessary write operations increases efficiency in terms of energy consumption. Compare the data to be written with the data to be written before proceeding with the write operation of the circuit to omit the unnecessary write operation and selectively execute the necessary write operation. As the number of MTJ increases, the gain in side of energy can be increased, so the simulation had proceeded by increasing the number of MTJ to 512. Simulation results show that the worst case energy consumption consumes 16.5% more energy than the conventional one, but it can reduce energy consumption by up to 90.6% at best. Reliability also increases through the process of comparing write data (WD) with data stored in MTJ.

Original languageEnglish
Title of host publicationProceedings of TENCON 2018 - 2018 IEEE Region 10 Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781538654576
Publication statusPublished - 2019 Feb 22
Event2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, Korea, Republic of
Duration: 2018 Oct 282018 Oct 31

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450


Conference2018 IEEE Region 10 Conference, TENCON 2018
Country/TerritoryKorea, Republic of

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This research was supported by the MOTIE(Ministry of Trade, Industry & Energy) (10080722) and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering


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