Low contact resistance of NiGe/ p -Ge by indium segregation during Ni germanidation

M. Li; G. Shin; J. Lee; J. Oh; H. D. Lee

doi:10.1063/1.5029858

Low contact resistance of NiGe/ p -Ge by indium segregation during Ni germanidation

M. Li, G. Shin, J. Lee, J. Oh, H. D. Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρ_c between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10^-8 Ωcm² was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal-oxide-semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.

Original language	English
Article number	065312
Journal	AIP Advances
Volume	8
Issue number	6
DOIs	https://doi.org/10.1063/1.5029858
Publication status	Published - 2018 Jun 1

Bibliographical note

Funding Information:
This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. We would like to thank Daegu centers of Korea Basic Science Institute (KBSI) for XRD and National NanoFab Center, Daejeon, South Korea for SIMS analyses.

Publisher Copyright:
© 2018 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Low contact resistance of NiGe/ p -Ge by indium segregation during Ni germanidation",

abstract = "Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10-8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal-oxide-semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.",

author = "M. Li and G. Shin and J. Lee and J. Oh and Lee, {H. D.}",

note = "Funding Information: This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. We would like to thank Daegu centers of Korea Basic Science Institute (KBSI) for XRD and National NanoFab Center, Daejeon, South Korea for SIMS analyses. Publisher Copyright: {\textcopyright} 2018 Author(s).",

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T1 - Low contact resistance of NiGe/ p -Ge by indium segregation during Ni germanidation

AU - Li, M.

AU - Shin, G.

AU - Lee, J.

AU - Oh, J.

AU - Lee, H. D.

N1 - Funding Information: This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. We would like to thank Daegu centers of Korea Basic Science Institute (KBSI) for XRD and National NanoFab Center, Daejeon, South Korea for SIMS analyses. Publisher Copyright: © 2018 Author(s).

PY - 2018/6/1

Y1 - 2018/6/1

N2 - Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10-8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal-oxide-semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.

AB - Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10-8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal-oxide-semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.

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ER -

Low contact resistance of NiGe/ p -Ge by indium segregation during Ni germanidation

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