Locking range of a hybrid mode-locked monolithic DBR semiconductor laser at millimeter-wave frequencies

Dalma Novak; Dug Y. Kim; Hai Feng Liu; Zaheer Ahmed; Yoh Ogawa

doi:10.1109/75.535832

Locking range of a hybrid mode-locked monolithic DBR semiconductor laser at millimeter-wave frequencies

Dalma Novak, Dug Y. Kim, Hai Feng Liu, Zaheer Ahmed, Yoh Ogawa

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid mode-locking is achieved by applying a radio-frequency (rf) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external rf signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively.

Original language	English
Pages (from-to)	320-322
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	6
Issue number	9
DOIs	https://doi.org/10.1109/75.535832
Publication status	Published - 1996 Sept

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1109/75.535832

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abstract = "We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid mode-locking is achieved by applying a radio-frequency (rf) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external rf signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively.",

author = "Dalma Novak and Kim, {Dug Y.} and Liu, {Hai Feng} and Zaheer Ahmed and Yoh Ogawa",

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AU - Novak, Dalma

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AU - Liu, Hai Feng

AU - Ahmed, Zaheer

AU - Ogawa, Yoh

PY - 1996/9

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N2 - We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid mode-locking is achieved by applying a radio-frequency (rf) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external rf signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively.

AB - We present the first investigation of the detuning characteristics at 33 GHz of a hybrid mode-locked monolithic distributed Bragg reflector semiconductor laser. Hybrid mode-locking is achieved by applying a radio-frequency (rf) signal, at a frequency corresponding to the fundamental laser repetition frequency, to the saturable absorber of the passively mode-locked laser. Measurements show a 3-dB locking range greater than 40 MHz with an applied external rf signal power of 0 dBm. At this power level, the laser beat signal exhibited phase-noise less than -78 dBc/Hz and -93 dBc/Hz at 10 kHz and 5 MHz offsets, respectively.

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Locking range of a hybrid mode-locked monolithic DBR semiconductor laser at millimeter-wave frequencies

Abstract

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