Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

Seonno Yoon; Yunwon Song; Seung Min Lee; Hi Deok Lee; Jungwoo Oh

doi:10.1088/0268-1242/31/5/055002

Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

Seonno Yoon, Yunwon Song, Seung Min Lee, Hi Deok Lee, Jungwoo Oh

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10^-6 Ω-cm² and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSi_x alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSi_x in the metallic regions. Microstructural changes were detected by systematic physical characterization.

Original language	English
Article number	055002
Journal	Semiconductor Science and Technology
Volume	31
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/31/5/055002
Publication status	Published - 2016 Mar 11

Bibliographical note

Funding Information:
Acknowledgements This work was partly supported by the IT R&D program of MOTIE/KEIT (10048931, The development of epi-growth analysis for next generation semiconductor and power semiconductor fundamental technology), the Future Semiconductor Device Technology Development Program (10048536) funded by MOTIE and KSRC, and the MSIP, Korea, under the IT Consilience Creative Program (NIPA- 2014-H0201-14-1001) supervised by NIPA.

Publisher Copyright:
© 2016 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/31/5/055002

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title = "Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures",

abstract = "Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.",

author = "Seonno Yoon and Yunwon Song and Lee, {Seung Min} and Lee, {Hi Deok} and Jungwoo Oh",

note = "Funding Information: Acknowledgements This work was partly supported by the IT R&D program of MOTIE/KEIT (10048931, The development of epi-growth analysis for next generation semiconductor and power semiconductor fundamental technology), the Future Semiconductor Device Technology Development Program (10048536) funded by MOTIE and KSRC, and the MSIP, Korea, under the IT Consilience Creative Program (NIPA- 2014-H0201-14-1001) supervised by NIPA. Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

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doi = "10.1088/0268-1242/31/5/055002",

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T1 - Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

AU - Yoon, Seonno

AU - Song, Yunwon

AU - Lee, Seung Min

AU - Lee, Hi Deok

AU - Oh, Jungwoo

N1 - Funding Information: Acknowledgements This work was partly supported by the IT R&D program of MOTIE/KEIT (10048931, The development of epi-growth analysis for next generation semiconductor and power semiconductor fundamental technology), the Future Semiconductor Device Technology Development Program (10048536) funded by MOTIE and KSRC, and the MSIP, Korea, under the IT Consilience Creative Program (NIPA- 2014-H0201-14-1001) supervised by NIPA. Publisher Copyright: © 2016 IOP Publishing Ltd.

PY - 2016/3/11

Y1 - 2016/3/11

N2 - Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.

AB - Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.

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Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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