Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures

Seonno Yoon, Yunwon Song, Seung Min Lee, Hi Deok Lee, Jungwoo Oh

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Microstructural changes in Si/Ti/Al/Cu (10/40/60/50 nm) Ohmic contacts to AlGaN/GaN heterostructure were investigated for complementary metal-oxide semiconductor compatible processes. Si/Ti/Al/Cu metallization exhibited a low specific contact resistance of 3.6 × 10-6 Ω-cm2 and contact resistance of 0.46 Ω-mm when a Si interfacial layer was used. Without a designated barrier metal, TiSix alloys that formed in the metallic region effectively suppressed Cu diffusion. The shallow TiN junction in AlGaN/GaN was attributed to TiSix in the metallic regions. Microstructural changes were detected by systematic physical characterization.

Original languageEnglish
Article number055002
JournalSemiconductor Science and Technology
Issue number5
Publication statusPublished - 2016 Mar 11

Bibliographical note

Funding Information:
Acknowledgements This work was partly supported by the IT R&D program of MOTIE/KEIT (10048931, The development of epi-growth analysis for next generation semiconductor and power semiconductor fundamental technology), the Future Semiconductor Device Technology Development Program (10048536) funded by MOTIE and KSRC, and the MSIP, Korea, under the IT Consilience Creative Program (NIPA- 2014-H0201-14-1001) supervised by NIPA.

Publisher Copyright:
© 2016 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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