Abstract
Localized resistive heating of microstructures has been used to activate vapor-deposition synthesis of silicon nanowires in a room-temperature chamber. The process is localized, selective, scalable and compatible with on-chip microelectronics and, in addition, removes necessity of post-synthesis assembly of nanowires to accomplish integrated nano-electromechanical systems. Synthesized nanowires with dimensions of 30-80 nm in diameter and up to 10 μm in length have been successfully demonstrated and growth rates of up to 1 μm/min have been observed. This new class of manufacturing method enables direct integration of nanotechnology with larger-scale systems for potential sensing and actuation applications.
Original language | English |
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Title of host publication | TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 186-189 |
Number of pages | 4 |
ISBN (Electronic) | 0780377311, 9780780377318 |
DOIs | |
Publication status | Published - 2003 |
Event | 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States Duration: 2003 Jun 8 → 2003 Jun 12 |
Publication series
Name | TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers |
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Volume | 1 |
Other
Other | 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers |
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Country/Territory | United States |
City | Boston |
Period | 03/6/8 → 03/6/12 |
Bibliographical note
Publisher Copyright:© 2003 IEEE.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering