Local epitaxial growth of Ru thin films by atomic layer deposition at low temperature

Seong Keun Kim, Sora Han, Gun Hwan Kim, Jae Hyuck Jang, Jeong Hwan Han, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

This study demonstrated that atomic layer deposition (ALD) is a promising deposition method for the epitaxial growth of Ru thin films on lattice matched metal film substrates. Ru films were grown on face centered cubic metal substrates using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O 2. Despite the low growth temperature (210°C), highly (002) oriented local epitaxial Ru films were formed on highly (111) oriented Pt and Au substrates due to the structural compatibility between the (111) plane of the Pt and Au substrates and the (002) plane of Ru. The Ru films on Pt substrates showed better epitaxial properties than those on Au substrates because of the smaller lattice mismatch between (111) Pt and (002) Ru (2.52%, 6.59% for the case of Au). The highly (002) oriented local epitaxial Ru films showed a lower growth rate than the more randomly oriented films.

Original languageEnglish
Pages (from-to)D477-D481
JournalJournal of the Electrochemical Society
Volume158
Issue number8
DOIs
Publication statusPublished - 2011 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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