Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene

Xiang Chen, Yong Ju Park, Tanmoy Das, Houk Jang, Jae Bok Lee, Jong Hyun Ahn

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)


Application-oriented patterned growth of transition metal dichalcogenides (TMDCs) and their heterojunctions is of critical importance for sophisticated, customized two-dimensional (2D) electronic and optoelectronic devices; however, it is still difficult to fabricate these patterns in a simple, clean, and high controllability manner without using optical lithography. Here, we report the direct synthesis of patterned MoS2 and graphene-MoS2 heterojunctions via selective plasma treatment of a SiO2/Si substrate and chemical vapor deposition of MoS2. This method has multiple merits, such as simple steps, a short operating time, easily isolated MoS2 layers with clean surfaces and controllable locations, shapes, sizes and thicknesses, which enable their integration into the device structure without using a photoresist. In addition, we demonstrate the direct growth of patterned graphene-MoS2 heterojunctions for the fabrication of transistor. This study reveals a novel method to fabricate and use patterned MoS2 and graphene-MoS2 heterojunctions, which could be generalized to the rational design of other 2D materials, heterojunctions and devices in the future.

Original languageEnglish
Pages (from-to)15181-15188
Number of pages8
Issue number33
Publication statusPublished - 2016 Sept 7

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) funded by Korean government (MSIF) (2015R1A3A2066337).

Publisher Copyright:
© 2016 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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