Abstract
A novel method to fabricate single-crystalline silicon tubular nanostructures on large area was developed. Utilizing the thermal dewetting of a thin metal film, redeposition of dewetted metal nanodots, and etch selectivity between silicon substrate and metal masks, the tubular nanostructures were formed from single crystalline silicon substrate on large area without using any nano-patterning process. This lithography-free fabrication method composed only of sputtering, rapid thermal process and reactive ion etch (RIE) is simple and cost effective batch-process. The transmission electron microscopic inspection revealed that the silicon tubular nanostructures are in the range of 1 μm in length, 250 nm in diameter, 75 nm in wall-thickness and 380 nm in hollow-depth.
| Original language | English |
|---|---|
| Pages (from-to) | 325-328 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 98 |
| DOIs | |
| Publication status | Published - 2012 Oct |
Bibliographical note
Funding Information:This research was supported by the Smart IT Convergence System Research Center funded by the Ministry of Education, Science and Technology as Global Frontier Project (2011-0031870), the Fusion Research Program for Green Technologies (2011-0000005) and Basic Science Research Program (2011-0002585) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, and Korea Institute of Industrial Technology (11E-O5-0001) funded by the Ministry of Strategy and Finance.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering