Liquid crystal alignment on the SiC thin film by the ion beam exposure method

Hyun Chan Moon; Hyung Ku Kang; Chang Joon Park; Jeoung Yeon Hwang; Dao Shik Seo; Sung Hoon Lim; Jin Jang

Liquid crystal alignment on the SiC thin film by the ion beam exposure method

Hyun Chan Moon, Hyung Ku Kang, Chang Joon Park, Jeoung Yeon Hwang, Dao Shik Seo, Sung Hoon Lim, Jin Jang

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about 87° of stable pretilt angle was achieved at the range from 30° to 45° of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

Original language	English
Pages (from-to)	468-470
Number of pages	3
Journal	Proceedings of International Meeting on Information Display
Volume	1
Publication status	Published - 2006
Event	5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 2005 Jul 19 → 2005 Jul 23

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@article{1ed3dec58268431d81d8f9e9536e6993,

title = "Liquid crystal alignment on the SiC thin film by the ion beam exposure method",

abstract = "We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about 87° of stable pretilt angle was achieved at the range from 30° to 45° of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.",

author = "Moon, {Hyun Chan} and Kang, {Hyung Ku} and Park, {Chang Joon} and Hwang, {Jeoung Yeon} and Seo, {Dao Shik} and Lim, {Sung Hoon} and Jin Jang",

year = "2006",

language = "English",

volume = "1",

pages = "468--470",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "5th International Meeting on Information Display ; Conference date: 19-07-2005 Through 23-07-2005",

}

TY - JOUR

T1 - Liquid crystal alignment on the SiC thin film by the ion beam exposure method

AU - Moon, Hyun Chan

AU - Kang, Hyung Ku

AU - Park, Chang Joon

AU - Hwang, Jeoung Yeon

AU - Seo, Dao Shik

AU - Lim, Sung Hoon

AU - Jang, Jin

PY - 2006

Y1 - 2006

N2 - We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about 87° of stable pretilt angle was achieved at the range from 30° to 45° of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

AB - We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about 87° of stable pretilt angle was achieved at the range from 30° to 45° of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

UR - http://www.scopus.com/inward/record.url?scp=33847372618&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847372618&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33847372618

SN - 1738-7558

VL - 1

SP - 468

EP - 470

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 5th International Meeting on Information Display

Y2 - 19 July 2005 through 23 July 2005

ER -

Liquid crystal alignment on the SiC thin film by the ion beam exposure method

Abstract

All Science Journal Classification (ASJC) codes

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