Light-induced hysteresis of In-Ga-Zn-O thin-film transistors with various temperatures

Seung Hee Kuk; Soo Yeon Lee; Sun Jae Kim; Binn Kim; Soo Jeong Park; Jang Yeon Kwon; Min Koo Han

doi:10.1109/LED.2012.2205891

Light-induced hysteresis of In-Ga-Zn-O thin-film transistors with various temperatures

Seung Hee Kuk, Soo Yeon Lee, Sun Jae Kim, Binn Kim, Soo Jeong Park, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light illumination. Hysteresis was observed under the 450-nm illumination and was increased with temperature. Light-induced hysteresis occurs due to increased subband-gap states at the interface between the gate-insulator layer and the active layer. Increased subband-gap states increase the subthreshold slope (SS) during the forward sweep. As temperature increases, the transition rate from neutral oxygen vacancy V _O to doubly ionized oxygen vacancy V _O ²⁺ increases under the same illumination conditions. The SS of the forward sweep increases with temperature due to the increase in V _O ²⁺ states.

Original language	English
Article number	6261524
Pages (from-to)	1279-1281
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	9
DOIs	https://doi.org/10.1109/LED.2012.2205891
Publication status	Published - 2012

Bibliographical note

Funding Information:
Manuscript received May 10, 2012; accepted June 18, 2012. Date of publication August 6, 2012; date of current version August 21, 2012. This work was supported by the National Research Foundation of Korea funded by the Korean government (MEST) under Grant R0A-2007-000-20117-0. The review of this letter was arranged by Editor S. J. Koester. S.-H. Kuk, S.-Y. Lee, S.-J. Kim, and M.-K. Han are with the School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea. B. Kim is with the School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea, and also with the Research and Development Center, LG Display, Paju 413-811, Korea. S.-J. Park are with the Research and Development Center, LG Display, Paju 413-811, Korea. J.-Y. Kwon is with School of Integrated Technology, Yonsei University, Inchoen 406-840, Korea (e-mail: jangyeon@yonsei.ac.kr). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2012.2205891

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2205891

Cite this

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title = "Light-induced hysteresis of In-Ga-Zn-O thin-film transistors with various temperatures",

abstract = "We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light illumination. Hysteresis was observed under the 450-nm illumination and was increased with temperature. Light-induced hysteresis occurs due to increased subband-gap states at the interface between the gate-insulator layer and the active layer. Increased subband-gap states increase the subthreshold slope (SS) during the forward sweep. As temperature increases, the transition rate from neutral oxygen vacancy V O to doubly ionized oxygen vacancy V O 2+ increases under the same illumination conditions. The SS of the forward sweep increases with temperature due to the increase in V O 2+ states.",

author = "Kuk, {Seung Hee} and Lee, {Soo Yeon} and Kim, {Sun Jae} and Binn Kim and Park, {Soo Jeong} and Kwon, {Jang Yeon} and Han, {Min Koo}",

note = "Funding Information: Manuscript received May 10, 2012; accepted June 18, 2012. Date of publication August 6, 2012; date of current version August 21, 2012. This work was supported by the National Research Foundation of Korea funded by the Korean government (MEST) under Grant R0A-2007-000-20117-0. The review of this letter was arranged by Editor S. J. Koester. S.-H. Kuk, S.-Y. Lee, S.-J. Kim, and M.-K. Han are with the School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea. B. Kim is with the School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea, and also with the Research and Development Center, LG Display, Paju 413-811, Korea. S.-J. Park are with the Research and Development Center, LG Display, Paju 413-811, Korea. J.-Y. Kwon is with School of Integrated Technology, Yonsei University, Inchoen 406-840, Korea (e-mail: jangyeon@yonsei.ac.kr). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2012.2205891",

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AB - We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light illumination. Hysteresis was observed under the 450-nm illumination and was increased with temperature. Light-induced hysteresis occurs due to increased subband-gap states at the interface between the gate-insulator layer and the active layer. Increased subband-gap states increase the subthreshold slope (SS) during the forward sweep. As temperature increases, the transition rate from neutral oxygen vacancy V O to doubly ionized oxygen vacancy V O 2+ increases under the same illumination conditions. The SS of the forward sweep increases with temperature due to the increase in V O 2+ states.

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Light-induced hysteresis of In-Ga-Zn-O thin-film transistors with various temperatures

Abstract

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